Part Details for RFD14N05SM9A by Rochester Electronics LLC
Results Overview of RFD14N05SM9A by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
RFD14N05SM9A Information
RFD14N05SM9A by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for RFD14N05SM9A
RFD14N05SM9A CAD Models
RFD14N05SM9A Part Data Attributes
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RFD14N05SM9A
Rochester Electronics LLC
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Datasheet
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RFD14N05SM9A
Rochester Electronics LLC
Power Field-Effect Transistor,
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-252AA | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 |
Alternate Parts for RFD14N05SM9A
This table gives cross-reference parts and alternative options found for RFD14N05SM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05SM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RFD14N05SM9A | onsemi | $0.6087 | N-Channel Power MOSFET 50V, 14A, 100mΩ, DPAK-3 / TO-252-3, 2500-REEL | RFD14N05SM9A vs RFD14N05SM9A |
| MTD8N06E | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 8A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3 | RFD14N05SM9A vs MTD8N06E |
| RFD14N05SM9A | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | RFD14N05SM9A vs RFD14N05SM9A |
| 2SK2018-01S | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(S), 3 PIN | RFD14N05SM9A vs 2SK2018-01S |
| MTD3055E | Texas Instruments | Check for Price | 8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | RFD14N05SM9A vs MTD3055E |
| SSR3055 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | RFD14N05SM9A vs SSR3055 |
| RFD14N05SM9A | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | RFD14N05SM9A vs RFD14N05SM9A |
| RFD14N05SM | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | RFD14N05SM9A vs RFD14N05SM |
| RFD14N05SM9A_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | RFD14N05SM9A vs RFD14N05SM9A_NL |