-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ, DPAK-3 / TO-252-3, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
RFD14N05LSM9A by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
31Y4002
|
Newark | Mosfet, N-Ch, 50 V, 14 A, To-252Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:50V, Continuous Drain Current Id:14A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi RFD14N05LSM9A RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 10 |
|
$0.5200 / $1.0200 | Buy Now |
DISTI #
38AH1690
|
Newark | Fet 50V 100.0 Mohm Dpak Rohs Compliant: Yes |Onsemi RFD14N05LSM9A RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2670 / $0.3560 | Buy Now |
DISTI #
05B7456
|
Newark | N Channel Mosfet, 50V, 14Ma, Channel Type:N Channel, Drain Source Voltage Vds:50V, Continuous Drain Current Id:14A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:2V, No. Of Pins:3Pins Rohs Compliant: Yes |Onsemi RFD14N05LSM9A RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2870 / $0.3760 | Buy Now |
DISTI #
RFD14N05LSM9ACT-ND
|
DigiKey | MOSFET N-CH 50V 14A TO252AA Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9610 In Stock |
|
$0.2584 / $1.0700 | Buy Now |
DISTI #
RFD14N05LSM9A
|
Avnet Americas | Power MOSFET, N Channel, 50 V, 14 A, 100 MilliOhms, TO-252AA, 3 Pins, Surface Mount - Tape and Reel (Alt: RFD14N05LSM9A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 2500 |
|
$0.2432 / $0.2521 | Buy Now |
DISTI #
512-RFD14N05LSM9A
|
Mouser Electronics | MOSFETs Power MOSFET RoHS: Compliant | 12211 |
|
$0.2840 / $1.0600 | Buy Now |
DISTI #
V36:1790_06301385
|
Arrow Electronics | Trans MOSFET N-CH Si 50V 14A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Date Code: 2417 | Americas - 5000 |
|
$0.2478 / $0.2666 | Buy Now |
DISTI #
V72:2272_06301385
|
Arrow Electronics | Trans MOSFET N-CH Si 50V 14A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2417 Container: Cut Strips | Americas - 25 |
|
$0.2693 / $0.5020 | Buy Now |
|
Future Electronics | N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks Container: Reel | 7500Reel |
|
$0.3000 / $0.3100 | Buy Now |
|
Future Electronics | N-Channel 50 V 0.1 Ohm Surface Mount Logic Level Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
|
$0.3000 / $0.3100 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
RFD14N05LSM9A
onsemi
Buy Now
Datasheet
|
Compare Parts:
RFD14N05LSM9A
onsemi
N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ, DPAK-3 / TO-252-3, 2500-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK-3 / TO-252-3 | |
Package Description | TO-252, 3 PIN | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for RFD14N05LSM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05LSM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
RFD14N05LSM | onsemi | $0.5496 | N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ, DPAK-3 / TO-252-3, 1800-TUBE | RFD14N05LSM9A vs RFD14N05LSM |
The maximum junction temperature (Tj) of the RFD14N05LSM9A is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
The recommended gate resistor value for the RFD14N05LSM9A is between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI).
Yes, the RFD14N05LSM9A is suitable for high-reliability applications. It is manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
To protect the RFD14N05LSM9A from ESD, handle the device by the body or use an anti-static wrist strap. Ensure the workspace and equipment are grounded, and use ESD-protective packaging and materials during storage and transportation.