Part Details for RFD14N05LSM9A by Intersil Corporation
Results Overview of RFD14N05LSM9A by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
RFD14N05LSM9A Information
RFD14N05LSM9A by Intersil Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for RFD14N05LSM9A
RFD14N05LSM9A CAD Models
RFD14N05LSM9A Part Data Attributes
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RFD14N05LSM9A
Intersil Corporation
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Datasheet
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RFD14N05LSM9A
Intersil Corporation
14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERSIL CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 48 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 100 ns | |
| Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for RFD14N05LSM9A
This table gives cross-reference parts and alternative options found for RFD14N05LSM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05LSM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| RFD14N05LSM9A | Rochester Electronics LLC | Check for Price | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, 3 PIN | RFD14N05LSM9A vs RFD14N05LSM9A |
| RFD14N05LSM | Rochester Electronics LLC | Check for Price | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, 3 PIN | RFD14N05LSM9A vs RFD14N05LSM |
| SPD14N05 | Siemens | Check for Price | Power Field-Effect Transistor, 14A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | RFD14N05LSM9A vs SPD14N05 |
RFD14N05LSM9A Frequently Asked Questions (FAQ)
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The thermal resistance of the RFD14N05LSM9A is typically around 2.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient) when mounted on a standard JEDEC 51-7 test board.
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Yes, the RFD14N05LSM9A is a radiation-hardened (RAD-HARD) device, making it suitable for use in high-reliability applications such as aerospace, defense, and satellite systems.
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The recommended gate drive voltage for the RFD14N05LSM9A is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To ensure optimal performance, the RFD14N05LSM9A should be biased with a gate-source voltage (Vgs) of around 10V to 15V, and a drain-source voltage (Vds) of around 50V to 100V, depending on the specific application requirements.
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The maximum operating frequency of the RFD14N05LSM9A is typically around 1MHz, although this can vary depending on the specific application and operating conditions.