Part Details for RFD14N05LSM by Intersil Corporation
Results Overview of RFD14N05LSM by Intersil Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
RFD14N05LSM Information
RFD14N05LSM by Intersil Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RFD14N05LSM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 525 |
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RFQ | ||
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Bristol Electronics | 21 |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,14A I(D),TO-252 | 420 |
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$0.4300 / $0.8600 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,14A I(D),TO-252 | 16 |
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$1.2750 / $2.0400 | Buy Now |
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Chip-Germany GmbH | RoHS: Not Compliant | 61 |
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RFQ |
Part Details for RFD14N05LSM
RFD14N05LSM CAD Models
RFD14N05LSM Part Data Attributes
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RFD14N05LSM
Intersil Corporation
Buy Now
Datasheet
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Compare Parts:
RFD14N05LSM
Intersil Corporation
14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERSIL CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 48 W | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 35 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 100 ns | |
| Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for RFD14N05LSM
This table gives cross-reference parts and alternative options found for RFD14N05LSM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05LSM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RFD14N05LSM9A | Rochester Electronics LLC | Check for Price | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, 3 PIN | RFD14N05LSM vs RFD14N05LSM9A |
| RFD14N05LSM | Rochester Electronics LLC | Check for Price | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, 3 PIN | RFD14N05LSM vs RFD14N05LSM |
| SPD14N05 | Siemens | Check for Price | Power Field-Effect Transistor, 14A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | RFD14N05LSM vs SPD14N05 |
RFD14N05LSM Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the RFD14N05LSM is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
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To ensure proper biasing, make sure to follow the recommended voltage and current ratings, and use a suitable gate driver circuit to provide a clean and stable gate signal.
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For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Also, follow the recommended pad layout and keep the device away from high-current paths.
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Yes, the RFD14N05LSM is suitable for high-frequency switching applications up to 1 MHz, but ensure that the gate driver circuit is capable of providing a fast rise and fall time to minimize switching losses.
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Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit to prevent damage from voltage and current surges. Also, ensure that the device is operated within its recommended safe operating area (SOA).