Datasheets
RF6C055BCTCR by: ROHM Semiconductor

Small Signal Field-Effect Transistor,

Part Details for RF6C055BCTCR by ROHM Semiconductor

Results Overview of RF6C055BCTCR by ROHM Semiconductor

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Applications Telecommunications

RF6C055BCTCR Information

RF6C055BCTCR by ROHM Semiconductor is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for RF6C055BCTCR

Part # Distributor Description Stock Price Buy
DISTI # RF6C055BCTCRCT-ND
DigiKey MOSFET P-CHANNEL 20V 5.5A TUMT6 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2710
In Stock
  • 1 $1.0600
  • 10 $0.7100
  • 100 $0.4657
  • 500 $0.3608
  • 1,000 $0.3270
  • 3,000 $0.2836
  • 6,000 $0.2624
  • 9,000 $0.2428
  • 15,000 $0.2391
  • 21,000 $0.2387
$0.2387 / $1.0600 Buy Now
DISTI # 755-RF6C055BCTCR
Mouser Electronics MOSFETs Pch -20V -5.5A Si MOSFET 1933
  • 1 $1.0400
  • 10 $0.6970
  • 100 $0.4570
  • 500 $0.3610
  • 1,000 $0.3220
  • 3,000 $0.2780
  • 6,000 $0.2620
  • 9,000 $0.2380
$0.2380 / $1.0400 Buy Now
DISTI # 63450679
Verical Trans MOSFET P-CH 20V 5.5A 6-Pin TUMT T/R RoHS: Compliant Min Qty: 203 Package Multiple: 1 Date Code: 2201 Americas - 2896
  • 203 $0.6831
$0.6831 Buy Now
DISTI # 61881217
Verical Trans MOSFET P-CH 20V 5.5A 6-Pin TUMT T/R RoHS: Compliant Min Qty: 203 Package Multiple: 1 Date Code: 2101 Americas - 1808
  • 203 $1.0290
$1.0290 Buy Now
DISTI # 62172525
Verical Trans MOSFET P-CH 20V 5.5A 6-Pin TUMT T/R RoHS: Compliant Min Qty: 183 Package Multiple: 1 Date Code: 2216 Americas - 1620
  • 183 $1.0000
  • 200 $0.6690
  • 500 $0.4380
  • 1,000 $0.4360
$0.4360 / $1.0000 Buy Now
Quest Components   3763
  • 1 $0.9950
  • 403 $0.3980
  • 2,011 $0.3483
$0.3483 / $0.9950 Buy Now
DISTI # RF6C055BCTCR
TME Transistor: P-MOSFET, unipolar, -20V, -5.5A, Idm: -18A, 1W, SOT363T Min Qty: 1 0
  • 1 $0.6440
  • 10 $0.4510
  • 100 $0.3330
  • 500 $0.2700
  • 1,000 $0.2500
  • 3,000 $0.2260
  • 6,000 $0.2130
  • 9,000 $0.2070
$0.2070 / $0.6440 RFQ
Ameya Holding Limited Transistors FETs, MOSFETs Single Min Qty: 1 100-Authorized Distributor
  • 1 $0.4357
  • 10 $0.4101
  • 25 $0.3845
  • 100 $0.3588
  • 250 $0.3332
  • 500 $0.3076
  • 1,000 $0.2819
  • 3,000 $0.2563
$0.2563 / $0.4357 Buy Now
DISTI # RF6C055BCTCR
Avnet Silica Pch 20V 55A Middle Power MOSFET TUMT6 SOT363T SC113DA Pch JEDEC SOT363T (Alt: RF6C055BCTCR) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days Silica - 0
Buy Now
DISTI # RF6C055BCTCR
Chip One Stop Semiconductors Min Qty: 5 Lead time: 0 Weeks, 1 Days Container: Cut Tape 1620
  • 5 $0.9980
  • 50 $0.6690
  • 100 $0.4380
  • 200 $0.4360
  • 500 $0.3460
  • 1,000 $0.3090
  • 3,000 $0.2900
  • 6,000 $0.2730
  • 24,000 $0.2650
  • 96,000 $0.2570
$0.2570 / $0.9980 Buy Now

Part Details for RF6C055BCTCR

RF6C055BCTCR CAD Models

RF6C055BCTCR Part Data Attributes

RF6C055BCTCR ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RF6C055BCTCR ROHM Semiconductor Small Signal Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2016-04-07
Samacsys Manufacturer ROHM Semiconductor
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.0331 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RF6C055BCTCR

This table gives cross-reference parts and alternative options found for RF6C055BCTCR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF6C055BCTCR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PMN30XPX Nexperia $0.1511 PMN30XP - 20 V, P-channel Trench MOSFET@en-us TSOP 6-Pin RF6C055BCTCR vs PMN30XPX
PMN30XP Nexperia Check for Price Small Signal Field-Effect Transistor RF6C055BCTCR vs PMN30XP

RF6C055BCTCR Related Parts

RF6C055BCTCR Frequently Asked Questions (FAQ)

  • ROHM recommends a 4-layer PCB with a solid ground plane, and to keep the signal traces as short as possible. Additionally, it's recommended to use a 50Ω impedance-controlled line and to avoid vias under the component.

  • The RF6C055BCTCR requires a bias voltage of 5V ± 10% and a bias current of 10mA ± 10%. Ensure that the bias voltage is stable and noise-free, and that the bias current is within the recommended range.

  • The RF6C055BCTCR is rated for operation from -40°C to +125°C. However, it's recommended to operate the device within the range of -20°C to +85°C for optimal performance and reliability.

  • ROHM recommends using ESD protection devices, such as TVS diodes or ESD arrays, to protect the RF6C055BCTCR from electrostatic discharge. Additionally, ensure that the PCB design and assembly process follow ESD-safe handling practices.

  • ROHM recommends storing the RF6C055BCTCR in a dry, cool place with a temperature range of 5°C to 30°C and humidity below 60%. Avoid storing the device in direct sunlight or near heat sources.

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