Part Details for RF5110GTR7 by RF Micro Devices Inc
Results Overview of RF5110GTR7 by RF Micro Devices Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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RF5110GTR7 Information
RF5110GTR7 by RF Micro Devices Inc is an RF/Microwave Amplifier.
RF/Microwave Amplifiers are under the broader part category of RF and Microwave Components.
RF and Microwave Engineering focuses on the design and operation of devices that transmit or receive radio waves. The main distinction between RF and microwave engineering is their wavelength, which influences how energy is transmitted and used in various applications. Read more about RF and Microwave Components on our RF and Microwave part category page.
Price & Stock for RF5110GTR7
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 207 |
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RFQ | ||
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Quest Components | NARROW BAND HIGH POWER AMPLIFIER, 880MHZ MIN, 915MHZ MAX, 1 FUNC, GAAS | 28 |
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$8.8245 / $14.3100 | Buy Now |
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Vyrian | RF & Microwave | 1672 |
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RFQ | |
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Win Source Electronics | RF Amp Module Single Power Amp 960MHz 4.8V 16-Pin QFN EP T/R / IC GSM POWER AMP 3V 16-QFN | 41000 |
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$3.0000 / $3.8750 | Buy Now |
Part Details for RF5110GTR7
RF5110GTR7 CAD Models
RF5110GTR7 Part Data Attributes
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RF5110GTR7
RF Micro Devices Inc
Buy Now
Datasheet
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Compare Parts:
RF5110GTR7
RF Micro Devices Inc
Narrow Band High Power Amplifier, 880MHz Min, 915MHz Max, 1 Func, GAAS, 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, ULTRA SMALL, PLASTIC, QFN-16
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | RF MICRO DEVICES INC | |
| Package Description | QFN-16 | |
| Reach Compliance Code | unknown | |
| ECCN Code | 5A991.G | |
| HTS Code | 8542.33.00.01 | |
| Characteristic Impedance | 50 Ω | |
| Construction | COMPONENT | |
| Gain | 33 dB | |
| Input Power-Max (CW) | 13 dBm | |
| JESD-609 Code | e3 | |
| Mounting Feature | SURFACE MOUNT | |
| Number of Functions | 1 | |
| Number of Terminals | 16 | |
| Operating Frequency-Max | 960 MHz | |
| Operating Frequency-Min | 150 MHz | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Equivalence Code | LCC16,.12SQ,20 | |
| Power Supplies | 3.5 V | |
| RF/Microwave Device Type | WIDE BAND MEDIUM POWER | |
| Supply Current-Max | 2400 mA | |
| Surface Mount | YES | |
| Technology | HYBRID | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| VSWR-Max | 10 |
Alternate Parts for RF5110GTR7
This table gives cross-reference parts and alternative options found for RF5110GTR7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF5110GTR7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| RF5110G | RF Micro Devices Inc | Check for Price | Narrow Band High Power Amplifier, 880MHz Min, 915MHz Max, 1 Func, GAAS, 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, ULTRA SMALL, PLASTIC, QFN-16 | RF5110GTR7 vs RF5110G |
| RF5110G | Qorvo | Check for Price | Narrow Band High Power Amplifier, 880MHz Min, 915MHz Max, 1 Func, GAAS, 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT, ULTRA SMALL, PLASTIC, QFN-16 | RF5110GTR7 vs RF5110G |
RF5110GTR7 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Use a via-stitching technique to connect the ground plane to the power plane. Ensure a low-impedance path to ground for the RF signal return.
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Use a Smith chart or a network analyzer to optimize the input and output impedance matching networks. The goal is to achieve a conjugate match between the device's input/output impedance and the external circuitry.
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The recommended operating temperature range is -40°C to +85°C. However, the device can operate up to +105°C with reduced reliability and performance.
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Ensure proper heat sinking, use a thermal interface material, and maintain a maximum junction temperature of 150°C. Monitor the device's temperature and reduce power consumption if necessary.
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Handle the device with ESD-protective equipment and follow standard ESD precautions. The device has internal ESD protection, but it's not a substitute for proper handling and storage procedures.