Part Details for RF1S17N06LSM by Harris Semiconductor
Results Overview of RF1S17N06LSM by Harris Semiconductor
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
RF1S17N06LSM Information
RF1S17N06LSM by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for RF1S17N06LSM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RF1S17N06LSM-ND
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DigiKey | LOGIC LEVEL GATE (5V) DEVICE Min Qty: 377 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
4000 In Stock |
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$0.8000 | Buy Now |
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DISTI #
87280611
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Verical | RF1S17N06LSM Min Qty: 392 Package Multiple: 1 Date Code: 9701 | Americas - 4000 |
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$0.9576 | Buy Now |
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Rochester Electronics | RF1S17N06L- N-Channel Power MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 4000 |
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$0.4750 / $0.7661 | Buy Now |
Part Details for RF1S17N06LSM
RF1S17N06LSM CAD Models
RF1S17N06LSM Part Data Attributes
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RF1S17N06LSM
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RF1S17N06LSM
Harris Semiconductor
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for RF1S17N06LSM
This table gives cross-reference parts and alternative options found for RF1S17N06LSM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1S17N06LSM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | RF1S17N06LSM vs IPB80N06S2LH5ATMA1 |
| NDB706AL | Texas Instruments | Check for Price | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | RF1S17N06LSM vs NDB706AL |
| NDB606BEL | National Semiconductor Corporation | Check for Price | TRANSISTOR 42 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | RF1S17N06LSM vs NDB606BEL |
| STD4NB25T4 | STMicroelectronics | Check for Price | 4A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | RF1S17N06LSM vs STD4NB25T4 |
| SPP47N10 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | RF1S17N06LSM vs SPP47N10 |
| FQA48N20 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | RF1S17N06LSM vs FQA48N20 |
| STP13NK50Z | STMicroelectronics | Check for Price | 11A, 500V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | RF1S17N06LSM vs STP13NK50Z |
| IXFH7N90Q | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | RF1S17N06LSM vs IXFH7N90Q |
| IXFH14N80 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | RF1S17N06LSM vs IXFH14N80 |
| IRFS730B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | RF1S17N06LSM vs IRFS730B |