Part Details for PSMN8R2-80YS,115 by NXP Semiconductors
Results Overview of PSMN8R2-80YS,115 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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PSMN8R2-80YS,115 Information
PSMN8R2-80YS,115 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN8R2-80YS,115
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 5768 |
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RFQ |
Part Details for PSMN8R2-80YS,115
PSMN8R2-80YS,115 CAD Models
PSMN8R2-80YS,115 Part Data Attributes
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PSMN8R2-80YS,115
NXP Semiconductors
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Datasheet
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PSMN8R2-80YS,115
NXP Semiconductors
PSMN8R2-80YS - N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET SOIC 4-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOIC | |
| Pin Count | 4 | |
| Manufacturer Package Code | SOT669 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 82 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
PSMN8R2-80YS,115 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the PSMN8R2-80YS,115 is a D2PAK package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 4.5mm x 3.5mm.
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To ensure reliable operation in high-temperature environments, ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout and thermal design guidelines.
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The maximum allowed voltage on the gate pin of the PSMN8R2-80YS,115 is 20V, but it's recommended to keep it below 15V to ensure reliable operation.
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Yes, the PSMN8R2-80YS,115 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout, decoupling, and gate drive design to minimize losses and ringing.
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Use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.