Part Details for PSMN4R8-100BSE by NXP Semiconductors
Results Overview of PSMN4R8-100BSE by NXP Semiconductors
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN4R8-100BSE Information
PSMN4R8-100BSE by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN4R8-100BSE
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 120A I(D), 100V, 0.0048OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 4 |
|
$3.0000 / $4.0000 | Buy Now |
|
|
Vyrian | Transistors | 631 |
|
RFQ | |
|
|
Win Source Electronics | 40093 |
|
$2.2991 / $3.4488 | Buy Now |
Part Details for PSMN4R8-100BSE
PSMN4R8-100BSE CAD Models
PSMN4R8-100BSE Part Data Attributes
|
|
PSMN4R8-100BSE
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
PSMN4R8-100BSE
NXP Semiconductors
120A, 100V, 0.0048ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | PLASTIC, D2PAK-3/2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | NXP | |
| Avalanche Energy Rating (Eas) | 542 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 707 A | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | PURE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
PSMN4R8-100BSE Frequently Asked Questions (FAQ)
-
NXP provides a recommended PCB layout in the application note AN11542, which includes guidelines for thermal vias, copper thickness, and pad layout to ensure optimal thermal performance.
-
The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. NXP recommends using the MOSFET gate resistor calculator tool or consulting the application note AN11160 for guidance on selecting the correct gate resistor value.
-
The maximum allowed junction temperature for the PSMN4R8-100BSE is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for optimal reliability and performance.
-
Yes, the PSMN4R8-100BSE is qualified for automotive and high-reliability applications. It meets the requirements of the AEC-Q101 standard and is suitable for use in harsh environments.
-
NXP recommends following the guidelines in the application note AN11543 for ensuring EMC in designs using the PSMN4R8-100BSE. This includes proper PCB layout, component selection, and shielding to minimize electromagnetic interference.