Part Details for PSMN4R6-60BS by NXP Semiconductors
Results Overview of PSMN4R6-60BS by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
PSMN4R6-60BS Information
PSMN4R6-60BS by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN4R6-60BS
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 313 |
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RFQ |
Part Details for PSMN4R6-60BS
PSMN4R6-60BS CAD Models
PSMN4R6-60BS Part Data Attributes
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PSMN4R6-60BS
NXP Semiconductors
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Datasheet
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PSMN4R6-60BS
NXP Semiconductors
100A, 60V, 0.0044ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | NXP | |
| Avalanche Energy Rating (Eas) | 266 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 565 A | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |