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Part Details for PSMN3R3-40YS,115 by Nexperia
Results Overview of PSMN3R3-40YS,115 by Nexperia
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN3R3-40YS,115 Information
PSMN3R3-40YS,115 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN3R3-40YS,115
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13T9544
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Newark | Mosfet, n Channel,40V,100A, lfpak, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Nexperia PSMN3R3-40YS,115 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1191 |
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$0.6110 / $1.8300 | Buy Now |
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DISTI #
1727-4633-1-ND
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DigiKey | MOSFET N-CH 40V 100A LFPAK56 Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
19223 In Stock |
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$0.4655 / $1.8300 | Buy Now |
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DISTI #
PSMN3R3-40YS,115
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Avnet Americas | Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN3R3-40YS,115) Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.4290 / $0.4398 | Buy Now |
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DISTI #
771-PSMN3R340YS115
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Mouser Electronics | MOSFETs N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET RoHS: Compliant | 0 |
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Order Now | |
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DISTI #
E02:0323_03089723
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Arrow Electronics | Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks Date Code: 2431 | Europe - 1500 |
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$0.4844 | Buy Now |
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DISTI #
A03:0893_01044695
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Arrow Electronics | Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R Min Qty: 1500 Package Multiple: 1500 Lead time: 10 Weeks Date Code: 2501 | Asia - 1500 |
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$0.4506 / $0.4738 | Buy Now |
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DISTI #
87833535
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Verical | Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R Min Qty: 1500 Package Multiple: 1500 Date Code: 2431 | Americas - 1500 |
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$0.4822 | Buy Now |
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DISTI #
88032428
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Verical | Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R Min Qty: 1500 Package Multiple: 1500 | Americas - 1500 |
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$0.4506 / $0.4738 | Buy Now |
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Future Electronics | PSMN3R3 Seriesl 40 V 3.3 mOhm SMT N-Channel Standard Level MOSFET - LFPAK-4 Min Qty: 1500 Package Multiple: 1500 |
1500 null |
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$0.4700 / $0.4950 | Buy Now |
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DISTI #
PSMN3R3-40YS.115
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TME | Transistor: N-MOSFET, unipolar, 40V, 100A, Idm: 546A, 117W Min Qty: 1 | 0 |
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$0.5460 / $1.1080 | RFQ |
Part Details for PSMN3R3-40YS,115
PSMN3R3-40YS,115 CAD Models
PSMN3R3-40YS,115 Part Data Attributes
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PSMN3R3-40YS,115
Nexperia
Buy Now
Datasheet
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Compare Parts:
PSMN3R3-40YS,115
Nexperia
PSMN3R3-40YS - N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET@en-us SOIC 4-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | NEXPERIA | |
| Part Package Code | SOIC | |
| Package Description | LFPAK-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | SOT669 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Nexperia | |
| Avalanche Energy Rating (Eas) | 162 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-235 | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 546 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
PSMN3R3-40YS,115 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for PSMN3R3-40YS,115 is a DPAK (TO-252) package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 3.5mm x 3.5mm.
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To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C, and follow proper thermal management and cooling techniques.
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The maximum allowed voltage on the gate of PSMN3R3-40YS,115 is ±20V, with a recommended maximum voltage of 15V to ensure reliable operation.
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Yes, PSMN3R3-40YS,115 is suitable for high-frequency switching applications up to 100 kHz, but ensure that the device is properly snubbed and that the PCB layout is optimized for high-frequency operation.
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To protect PSMN3R3-40YS,115 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.