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PSMN1R9-40PL - N-channel 40 V, 1.7 mΩ logic level MOSFET in SOT78@en-us TO-220 3-Pin
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PSMN1R9-40PLQ by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1727-1851-ND
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DigiKey | MOSFET N-CH 40V 150A TO220AB Min Qty: 1 Lead time: 99 Weeks Container: Tube |
462 In Stock |
|
$2.1942 / $4.6700 | Buy Now |
DISTI #
PSMN1R9-40PLQ
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Avnet Americas | Trans MOSFET N-CH 40V 150A 3-Pin SOT-78 Rail - Rail/Tube (Alt: PSMN1R9-40PLQ) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Tube | 0 |
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$1.6716 / $1.7786 | Buy Now |
DISTI #
86010348
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Verical | Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail Min Qty: 192 Package Multiple: 1 Date Code: 2101 | Americas - 605 |
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$1.9625 | Buy Now |
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Rochester Electronics | 150A, 40V, 0.0017ohm, N-Channel Power MOSFET, TO-220AB RoHS: Compliant Status: Active Min Qty: 1 | 605 |
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$1.2600 / $1.5700 | Buy Now |
DISTI #
PSMN1R9-40PLQ
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TME | Transistor: N-MOSFET, Trench, unipolar, 40V, 150A, Idm: 1332A, 349W Min Qty: 1 | 0 |
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$2.0500 / $3.2000 | RFQ |
DISTI #
PSMN1R9-40PLQ
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Avnet Silica | (Alt: PSMN1R9-40PLQ) RoHS: Compliant Min Qty: 50 Package Multiple: 50 | Silica - 0 |
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Buy Now | |
DISTI #
PSMN1R9-40PLQ
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EBV Elektronik | (Alt: PSMN1R9-40PLQ) RoHS: Compliant Min Qty: 50 Package Multiple: 50 | EBV - 0 |
|
Buy Now |
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PSMN1R9-40PLQ
Nexperia
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Datasheet
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PSMN1R9-40PLQ
Nexperia
PSMN1R9-40PL - N-channel 40 V, 1.7 mΩ logic level MOSFET in SOT78@en-us TO-220 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | TO-220 | |
Package Description | SC-46, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT78 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 801.1 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 150 A | |
Drain-source On Resistance-Max | 0.0017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 1332 A | |
Reference Standard | IEC-60134 | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Nexperia recommends a PCB footprint with a minimum pad size of 1.5 mm x 1.5 mm and a thermal pad size of 2.5 mm x 2.5 mm to ensure proper heat dissipation and electrical connection.
While the PSMN1R9-40PLQ is rated for operation up to 150°C, it's essential to consider the derating curves and thermal management to ensure reliable operation in high-temperature environments.
Use a gate driver or a voltage regulator to ensure the Vgs is within the recommended range of -10 V to 10 V. Exceeding this range may damage the MOSFET.
The maximum allowed current for the PSMN1R9-40PLQ is 40 A, but it's essential to consider the derating curves and thermal management to ensure reliable operation.
Yes, the PSMN1R9-40PLQ is suitable for switching applications due to its low Rds(on) and high switching speed. However, ensure proper gate drive and layout to minimize switching losses and EMI.