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PSMN1R5-30YLC - N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology@en-us SOIC 4-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN1R5-30YLC,115 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
74AH1191
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Newark | Mosfet, N-Ch, 30V, 100A, Lfpak56 Rohs Compliant: Yes |Nexperia PSMN1R5-30YLC,115 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
1727-5297-1-ND
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DigiKey | MOSFET N-CH 30V 100A LFPAK56 Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4691 In Stock |
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$0.5895 / $1.5500 | Buy Now |
DISTI #
PSMN1R5-30YLC,115
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Avnet Americas | Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN1R5-30YLC,115) Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.4316 / $0.4775 | Buy Now |
DISTI #
771-PSMN1R530YLC115
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Mouser Electronics | MOSFETs N-channel 40 V, 1.5 mohm, 240 A standard level MOSFET in LFPAK56 using NextPower-S3Schottky-Plus technology RoHS: Compliant | 5206 |
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$0.5160 / $1.5200 | Buy Now |
DISTI #
86021930
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Verical | Trans MOSFET N-CH 30V 200A 5-Pin(4+Tab) LFPAK T/R Min Qty: 516 Package Multiple: 1 Date Code: 2201 | Americas - 67139 |
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$0.7279 | Buy Now |
DISTI #
87170519
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Verical | Trans MOSFET N-CH 30V 200A 5-Pin(4+Tab) LFPAK T/R Min Qty: 51 Package Multiple: 1 Date Code: 2304 | Americas - 1500 |
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$0.5822 / $1.1800 | Buy Now |
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Rochester Electronics | PSMN1R5-30YLC - N-channel 30 V 1.55mOhm logic level MOSFET in LFPAK using NextPower technology RoHS: Compliant Status: Active Min Qty: 1 | 67139 |
|
$0.3610 / $0.5823 | Buy Now |
DISTI #
PSMN1R5-30YLC.115
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TME | Transistor: N-MOSFET, unipolar, 30V, 200A, Idm: 1016A, 179W Min Qty: 1 | 0 |
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$0.7400 / $1.4500 | RFQ |
DISTI #
PSMN1R5-30YLC,115
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Avnet Asia | Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN1R5-30YLC,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days | 7500 |
|
$0.4494 / $0.5457 | Buy Now |
DISTI #
PSMN1R5-30YLC,115
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Avnet Silica | Trans MOSFET NCH 30V 100A 5Pin4Tab LFPAK TR (Alt: PSMN1R5-30YLC,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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PSMN1R5-30YLC,115
Nexperia
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Datasheet
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PSMN1R5-30YLC,115
Nexperia
PSMN1R5-30YLC - N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology@en-us SOIC 4-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | SOIC | |
Package Description | SO8, LFPAK-4 | |
Pin Count | 4 | |
Manufacturer Package Code | SOT669 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 147 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.00205 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-235 | |
JESD-30 Code | R-PSSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 1008 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for PSMN1R5-30YLC,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN1R5-30YLC,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
PSMN1R5-30YLC,115 | NXP Semiconductors | Check for Price | PSMN1R5-30YLC - N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology SOIC 4-Pin | PSMN1R5-30YLC,115 vs PSMN1R5-30YLC,115 |
The recommended PCB footprint for PSMN1R5-30YLC,115 is a DPAK (TO-252) package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 3.5mm x 3.5mm.
To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C, and follow proper thermal management and cooling techniques.
The maximum allowed voltage on the gate of PSMN1R5-30YLC,115 is ±20V, with a recommended maximum voltage of ±15V for reliable operation.
To protect PSMN1R5-30YLC,115 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the PCB is designed with ESD protection circuits and components.
The recommended storage condition for PSMN1R5-30YLC,115 is in a dry, cool place with a temperature range of -40°C to 30°C and relative humidity below 60%.