Datasheets
PSMN070-200B by:

TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power

Part Details for PSMN070-200B by NXP Semiconductors

Results Overview of PSMN070-200B by NXP Semiconductors

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

PSMN070-200B Information

PSMN070-200B by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
10054999-N0200BULF Amphenol Communications Solutions Densishield Cable Assembly, Input Output Connector, 2 meter / 26 AWG / Torx screw
51762-10201200BALF Amphenol Communications Solutions PwrBlade®, Power Connectors, 2P 12S Right Angle Receptacle, Solder To Board
51968-10009200BBLF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 92S Right Angle Receptacle With Guide Pins

Price & Stock for PSMN070-200B

Part # Distributor Description Stock Price Buy
Bristol Electronics   700
RFQ
Cytech Systems Limited 35A, 200V, 0.07OHM, N-CHANNEL 800
RFQ

Part Details for PSMN070-200B

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PSMN070-200B Part Data Attributes

PSMN070-200B NXP Semiconductors
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PSMN070-200B NXP Semiconductors TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 462 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230 W
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PSMN070-200B

This table gives cross-reference parts and alternative options found for PSMN070-200B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN070-200B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PSMN070-200B/T3 Nexperia Check for Price Power Field-Effect Transistor PSMN070-200B vs PSMN070-200B/T3
PSMN070-200B Nexperia Check for Price Power Field-Effect Transistor PSMN070-200B vs PSMN070-200B
934055719118 Nexperia Check for Price Power Field-Effect Transistor PSMN070-200B vs 934055719118
Part Number Manufacturer Composite Price Description Compare
PSMN070-200B/T3 NXP Semiconductors Check for Price TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power PSMN070-200B vs PSMN070-200B/T3
PSMN070-200B,118 NXP Semiconductors Check for Price N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin PSMN070-200B vs PSMN070-200B,118
934055719118 NXP Semiconductors Check for Price TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power PSMN070-200B vs 934055719118
IRFS23N20DTRR International Rectifier Check for Price Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 PSMN070-200B vs IRFS23N20DTRR
FQB34N20LTM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3 PSMN070-200B vs FQB34N20LTM
FQB34N20L Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 PSMN070-200B vs FQB34N20L
FQB34N20TM Rochester Electronics LLC Check for Price 31A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3 PSMN070-200B vs FQB34N20TM
IRFS23N20DTRLP International Rectifier Check for Price Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 PSMN070-200B vs IRFS23N20DTRLP
IRFS23N20DTRRP International Rectifier Check for Price Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 PSMN070-200B vs IRFS23N20DTRRP

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