Part Details for PSMN069-100YS by Nexperia
Results Overview of PSMN069-100YS by Nexperia
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
PSMN069-100YS Information
PSMN069-100YS by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN069-100YS
| Part # | Distributor | Description | Stock | Price | Buy | |
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Cytech Systems Limited | 1500 |
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RFQ |
Part Details for PSMN069-100YS
PSMN069-100YS CAD Models
PSMN069-100YS Part Data Attributes
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PSMN069-100YS
Nexperia
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Datasheet
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PSMN069-100YS
Nexperia
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | LFPAK-4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-02-01 | |
| Samacsys Manufacturer | Nexperia | |
| Avalanche Energy Rating (Eas) | 24 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.0724 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
PSMN069-100YS Frequently Asked Questions (FAQ)
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The recommended PCB footprint for PSMN069-100YS is a D2PAK (TO-263) package with a minimum pad size of 6.5mm x 4.5mm and a thermal pad size of 4.5mm x 4.5mm.
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To ensure reliable operation of PSMN069-100YS in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, including providing adequate heat sinking and thermal management, and ensuring that the device is operated within its specified temperature range of -55°C to 150°C.
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The maximum allowed voltage spike for PSMN069-100YS is 120% of the maximum rated voltage (100V) for a duration of less than 10ms, according to the datasheet.
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Yes, PSMN069-100YS can be used in switching applications, but it is recommended to follow proper switching design guidelines, including ensuring that the device is operated within its specified switching frequency range and providing adequate snubbing and filtering to prevent voltage spikes and ringing.
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To determine the power dissipation of PSMN069-100YS in your application, you can use the following formula: Pd = (Vds x Ids) + (Vgs x Igs), where Pd is the power dissipation, Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.