Part Details for PSMN063-150D by NXP Semiconductors
Results Overview of PSMN063-150D by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN063-150D Information
PSMN063-150D by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN063-150D
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 1765 |
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$0.4875 / $1.8750 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,29A I(D),TO-252AA | 1412 |
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$0.6250 / $2.5000 | Buy Now |
Part Details for PSMN063-150D
PSMN063-150D CAD Models
PSMN063-150D Part Data Attributes
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PSMN063-150D
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
PSMN063-150D
NXP Semiconductors
TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-252AA | |
| Package Description | PLASTIC, SC-63, TO-252, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 502 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.063 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 116 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN063-150D
This table gives cross-reference parts and alternative options found for PSMN063-150D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN063-150D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 934055758118 | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN063-150D vs 934055758118 |
| PSMN063-150D,118 | Nexperia | Check for Price | PSMN063-150D - N-channel TrenchMOS SiliconMAX standard level FET@en-us DPAK 3-Pin | PSMN063-150D vs PSMN063-150D,118 |
| PSMN063-150D | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN063-150D vs PSMN063-150D |
| IRFR13N15D | International Rectifier | Check for Price | Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | PSMN063-150D vs IRFR13N15D |
| IRFR13N15DPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | PSMN063-150D vs IRFR13N15DPBF |
| IRFR13N15D | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | PSMN063-150D vs IRFR13N15D |
| PSMN063-150D/T3 | NXP Semiconductors | Check for Price | TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3, FET General Purpose Power | PSMN063-150D vs PSMN063-150D/T3 |
| IRFR13N15DPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | PSMN063-150D vs IRFR13N15DPBF |
| IRFR13N15DTRLP | International Rectifier | Check for Price | Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | PSMN063-150D vs IRFR13N15DTRLP |
| IRFR13N15DTRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 14A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | PSMN063-150D vs IRFR13N15DTRPBF |
PSMN063-150D Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the PSMN063-150D is -55°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's power handling capabilities at higher temperatures to ensure reliable operation.
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To ensure proper soldering, follow the recommended soldering profile and guidelines provided in the NXP application note AN10365. Additionally, use a solder with a melting point above 220°C to prevent damage to the device.
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For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the PCB. A recommended PCB layout is provided in the NXP application note AN10365. Additionally, consider using thermal vias and a heat sink to dissipate heat efficiently.
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Yes, the PSMN063-150D is qualified for use in high-reliability and automotive applications. It meets the requirements of the AEC-Q101 standard and is manufactured using a robust process that ensures high reliability and low defect rates.
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The PSMN063-150D has built-in ESD protection, but it's still important to follow proper ESD handling procedures during assembly and testing. Use ESD-safe materials, grounding straps, and follow the guidelines outlined in the NXP application note AN10365.