Part Details for PSMN030-60YS by Nexperia
Results Overview of PSMN030-60YS by Nexperia
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
PSMN030-60YS Information
PSMN030-60YS by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PSMN030-60YS
PSMN030-60YS CAD Models
PSMN030-60YS Part Data Attributes
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PSMN030-60YS
Nexperia
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Datasheet
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PSMN030-60YS
Nexperia
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | LFPAK-5 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-02-01 | |
| Samacsys Manufacturer | Nexperia | |
| Avalanche Energy Rating (Eas) | 23 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.0247 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-235 | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 116 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN030-60YS
This table gives cross-reference parts and alternative options found for PSMN030-60YS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN030-60YS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| PSMN030-60YS | NXP Semiconductors | Check for Price | 29A, 60V, 0.0247ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-5 | PSMN030-60YS vs PSMN030-60YS |
| PH3855L,115 | Nexperia | Check for Price | PH3855L - N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin | PSMN030-60YS vs PH3855L,115 |
PSMN030-60YS Frequently Asked Questions (FAQ)
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The recommended PCB footprint for PSMN030-60YS is a standard SOT223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
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To ensure reliable operation of PSMN030-60YS in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, including providing adequate heat sinking and thermal management, and ensuring that the device is operated within its specified temperature range.
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The maximum allowed voltage on the gate of PSMN030-60YS is ±20V, with a recommended maximum voltage of 15V to ensure reliable operation and prevent damage to the device.
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Yes, PSMN030-60YS can be used in switching applications, but it is recommended to follow proper switching design guidelines, including ensuring that the device is operated within its specified frequency range and that proper gate drive and snubber circuits are used to prevent ringing and oscillation.
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To determine the power dissipation of PSMN030-60YS in your application, you can use the device's thermal resistance (Rth) and the maximum allowed junction temperature (Tj) to calculate the maximum power dissipation. You can also use Nexperia's power dissipation calculator tool to simplify the calculation.