Part Details for PSMN030-60YS by NXP Semiconductors
Results Overview of PSMN030-60YS by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
PSMN030-60YS Information
PSMN030-60YS by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN030-60YS
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 643 |
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RFQ | |
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Win Source Electronics | N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET | 3899 |
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$0.2797 / $0.4195 | Buy Now |
Part Details for PSMN030-60YS
PSMN030-60YS CAD Models
PSMN030-60YS Part Data Attributes
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PSMN030-60YS
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
PSMN030-60YS
NXP Semiconductors
29A, 60V, 0.0247ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-5
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | PLASTIC, LFPAK-5 | |
| Pin Count | 235 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | NXP | |
| Avalanche Energy Rating (Eas) | 23 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.0247 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-235 | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 116 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN030-60YS
This table gives cross-reference parts and alternative options found for PSMN030-60YS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN030-60YS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PSMN030-60YS | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN030-60YS vs PSMN030-60YS |
| PH3855L,115 | Nexperia | Check for Price | PH3855L - N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin | PSMN030-60YS vs PH3855L,115 |
PSMN030-60YS Frequently Asked Questions (FAQ)
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NXP provides a recommended PCB layout in the application note AN11160, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
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The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. A general guideline is to use a value between 1 ohm and 10 ohm. NXP provides a gate resistor selection guide in the application note AN11160.
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The PSMN030-60YS is designed to withstand voltage transients up to 80V for a duration of 100ns, as specified in the datasheet. However, it's recommended to use a voltage clamp or transient voltage suppressor to protect the device from excessive voltage spikes.
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Yes, the PSMN030-60YS is qualified according to AEC-Q101, which makes it suitable for automotive and high-reliability applications. However, it's essential to follow the recommended design and manufacturing guidelines to ensure the device meets the required reliability and quality standards.
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To ensure EMC, follow the guidelines in the application note AN11160, which includes recommendations for PCB layout, component placement, and shielding. Additionally, consider using electromagnetic interference (EMI) filters and shielding components to minimize radiation and susceptibility.