Part Details for PSMN020-100YS,115 by NXP Semiconductors
Results Overview of PSMN020-100YS,115 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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PSMN020-100YS,115 Information
PSMN020-100YS,115 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN020-100YS,115
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 35131 |
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RFQ |
Part Details for PSMN020-100YS,115
PSMN020-100YS,115 CAD Models
PSMN020-100YS,115 Part Data Attributes
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PSMN020-100YS,115
NXP Semiconductors
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Datasheet
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PSMN020-100YS,115
NXP Semiconductors
PSMN020-100YS - N-channel 100V 20.5mΩ standard level MOSFET in LFPAK SOIC 4-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOIC | |
| Pin Count | 4 | |
| Manufacturer Package Code | SOT669 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 43 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 106 W | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
PSMN020-100YS,115 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for PSMN020-100YS,115 is a D2PAK package with a minimum pad size of 6.5mm x 5.5mm and a thermal pad size of 4.5mm x 4.5mm.
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To ensure reliability in high-temperature applications, ensure proper thermal management by providing adequate heat sinking, and follow the recommended derating curves for voltage and current. Also, consider using a thermal interface material (TIM) to improve heat transfer.
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The maximum allowed voltage transient for PSMN020-100YS,115 is 150% of the maximum rated voltage (100V) for a duration of 100ms, as per the datasheet. However, it's recommended to consult with NXP Semiconductors or a qualified engineer for specific application requirements.
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Yes, you can use multiple PSMN020-100YS,115 devices in parallel to increase current handling. However, ensure proper thermal management, and consider the current sharing and mismatch between devices. Consult with NXP Semiconductors or a qualified engineer for specific application requirements.
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The recommended gate drive voltage for PSMN020-100YS,115 is between 10V to 15V, with a maximum gate-source voltage of ±20V. However, consult the datasheet and application notes for specific gate drive requirements.