Part Details for PSMN018-80YS by Nexperia
Results Overview of PSMN018-80YS by Nexperia
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PSMN018-80YS Information
PSMN018-80YS by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PSMN018-80YS
PSMN018-80YS CAD Models
PSMN018-80YS Part Data Attributes
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PSMN018-80YS
Nexperia
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Datasheet
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PSMN018-80YS
Nexperia
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | SMALL OUTLINE, R-PSSO-G4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-02-01 | |
| Samacsys Manufacturer | Nexperia | |
| Avalanche Energy Rating (Eas) | 64 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 45 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-235 | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 182 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
PSMN018-80YS Frequently Asked Questions (FAQ)
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The maximum operating temperature range for PSMN018-80YS is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure the SOA is not exceeded, calculate the maximum allowed voltage and current based on the application's requirements. Then, verify that the MOSFET's voltage and current ratings are not exceeded. Additionally, consider the MOSFET's thermal characteristics and ensure proper heat sinking to prevent overheating.
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For optimal thermal performance, use a PCB layout with a large copper area for heat dissipation. Ensure the MOSFET is mounted on a thermally conductive material, such as a heat sink or a metal core PCB. Keep the thermal resistance (Rth) as low as possible by using thermal vias and a sufficient number of thermal pads.
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To handle the high peak current capability during switching, ensure the PCB layout can handle the high current density. Use a sufficient number of vias and a wide enough copper track to minimize resistance and inductance. Additionally, consider using a current sense resistor or a Rogowski coil to monitor the current and prevent overcurrent conditions.
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Handle the PSMN018-80YS with care to prevent electrostatic discharge (ESD) damage. Use an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the MOSFET's pins or exposed die, and use ESD-safe packaging and storage materials.