Part Details for PSMN017-60YS by NXP Semiconductors
Results Overview of PSMN017-60YS by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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PSMN017-60YS Information
PSMN017-60YS by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PSMN017-60YS
PSMN017-60YS CAD Models
PSMN017-60YS Part Data Attributes
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PSMN017-60YS
NXP Semiconductors
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Datasheet
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PSMN017-60YS
NXP Semiconductors
44A, 60V, 0.0157ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | PLASTIC, LFPAK-4 | |
| Pin Count | 235 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 44 A | |
| Drain-source On Resistance-Max | 0.0157 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-235 | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 174 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN017-60YS
This table gives cross-reference parts and alternative options found for PSMN017-60YS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN017-60YS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PSMN039-100YS | NXP Semiconductors | Check for Price | TRANSISTOR 28.1 A, 100 V, 0.0395 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power | PSMN017-60YS vs PSMN039-100YS |
| PSMN3R3-40YS | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN017-60YS vs PSMN3R3-40YS |
| PSMN039-100YS | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN017-60YS vs PSMN039-100YS |
| PSMN8R5-60YS | NXP Semiconductors | Check for Price | TRANSISTOR 76 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power | PSMN017-60YS vs PSMN8R5-60YS |
| PH20100S | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN017-60YS vs PH20100S |
| PSMN017-60YS | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN017-60YS vs PSMN017-60YS |
| PH20100S,115 | NXP Semiconductors | Check for Price | PH20100S - N-channel TrenchMOS standard level FET SOIC 4-Pin | PSMN017-60YS vs PH20100S,115 |
| PH1955L,115 | Nexperia | Check for Price | PH1955L - N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin | PSMN017-60YS vs PH1955L,115 |
| PHM30NQ10T,518 | NXP Semiconductors | Check for Price | PHM30NQ10T | PSMN017-60YS vs PHM30NQ10T,518 |
| PSMN3R3-40YS | NXP Semiconductors | Check for Price | 100A, 40V, 0.0033ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4 | PSMN017-60YS vs PSMN3R3-40YS |
PSMN017-60YS Frequently Asked Questions (FAQ)
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The maximum operating temperature range for PSMN017-60YS is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
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To ensure reliability in high-temperature applications, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, consider derating the device's power handling capabilities at higher temperatures.
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NXP provides a recommended PCB layout and thermal design guide for PSMN017-60YS in their application notes and design resources. It's essential to follow these guidelines to ensure optimal thermal performance and minimize thermal resistance.
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Yes, PSMN017-60YS can be used in switching applications, but it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's specified limits.
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To handle ESD protection for PSMN017-60YS, follow standard ESD handling practices, such as using ESD-safe workstations, wrist straps, and packaging materials. Additionally, ensure that the device is properly grounded during assembly and handling.