Part Details for PSMN015-100B,118 by NXP Semiconductors
Results Overview of PSMN015-100B,118 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
PSMN015-100B,118 Information
PSMN015-100B,118 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN015-100B,118
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 120 |
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$0.8400 / $2.2400 | Buy Now |
Part Details for PSMN015-100B,118
PSMN015-100B,118 CAD Models
PSMN015-100B,118 Part Data Attributes
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PSMN015-100B,118
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
PSMN015-100B,118
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT404 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 320 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN015-100B,118
This table gives cross-reference parts and alternative options found for PSMN015-100B,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN015-100B,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PSMN015-100B | Philips Semiconductors | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | PSMN015-100B,118 vs PSMN015-100B |
| 934055639118 | NXP Semiconductors | Check for Price | 75A, 100V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | PSMN015-100B,118 vs 934055639118 |
PSMN015-100B,118 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for PSMN015-100B,118 is -55°C to 150°C.
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To ensure safe operating area (SOA) for PSMN015-100B,118, follow the guidelines in the datasheet for voltage, current, and power dissipation. Additionally, consider the thermal characteristics, such as junction temperature and thermal resistance, to prevent overheating.
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The recommended gate drive voltage for PSMN015-100B,118 is between 4.5V and 10V, with a typical value of 5V to 6V. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and circuit design.
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To handle ESD protection for PSMN015-100B,118, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, consider implementing ESD protection circuits in your design, such as TVS diodes or ESD protection arrays.
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The typical turn-on and turn-off time for PSMN015-100B,118 is around 10-20 ns, but this can vary depending on the specific application, gate drive voltage, and circuit design. Consult the datasheet and application notes for more detailed information.