Part Details for PSMN013-100PS by Nexperia
Results Overview of PSMN013-100PS by Nexperia
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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PSMN013-100PS Information
PSMN013-100PS by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PSMN013-100PS
PSMN013-100PS CAD Models
PSMN013-100PS Part Data Attributes
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PSMN013-100PS
Nexperia
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Datasheet
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PSMN013-100PS
Nexperia
Power Field-Effect Transistor, 67A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | SC-46, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Nexperia | |
| Avalanche Energy Rating (Eas) | 115 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 67 A | |
| Drain-source On Resistance-Max | 0.0139 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 268 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN013-100PS
This table gives cross-reference parts and alternative options found for PSMN013-100PS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN013-100PS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APT10M19SVRG | Microchip Technology Inc | $13.3402 | Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | PSMN013-100PS vs APT10M19SVRG |
| PSMN015-100YL | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN013-100PS vs PSMN015-100YL |
| NTP6448ANG | onsemi | Check for Price | 76A, 100V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN | PSMN013-100PS vs NTP6448ANG |
| IRFSL4610TRLPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN | PSMN013-100PS vs IRFSL4610TRLPBF |
| APT10M19BVFR | Microchip Technology Inc | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | PSMN013-100PS vs APT10M19BVFR |
| IRFB4610TRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | PSMN013-100PS vs IRFB4610TRR |
| IRFS4610TRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | PSMN013-100PS vs IRFS4610TRRPBF |
| IXTT75N10 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | PSMN013-100PS vs IXTT75N10 |
| AUIRFS4610 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | PSMN013-100PS vs AUIRFS4610 |
| APT10M19BVFRG | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | PSMN013-100PS vs APT10M19BVFRG |