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PSMN012-80BS - N-channel 80 V 11 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN012-80BS,118 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
96T7349
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Newark | Mosfet, N Channel, 80V, 74A, D2Pak, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:74A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Nexperia PSMN012-80BS,118 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 425 |
|
$0.6080 | Buy Now |
DISTI #
1727-7206-1-ND
|
DigiKey | MOSFET N-CH 80V 74A D2PAK Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7874 In Stock |
|
$0.6741 / $1.8300 | Buy Now |
DISTI #
PSMN012-80BS,118
|
Avnet Americas | Trans MOSFET N-CH 80V 74A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN012-80BS,118) RoHS: Compliant Min Qty: 4800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$0.6213 / $0.6369 | Buy Now |
DISTI #
771-PSMN012-80BS,118
|
Mouser Electronics | MOSFETs N-channel 100V 13.9mΩ standard level MOSFET in D2PAK RoHS: Compliant | 6127 |
|
$0.6740 / $1.6400 | Buy Now |
DISTI #
E02:0323_05875401
|
Arrow Electronics | Trans MOSFET N-CH 80V 74A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks Date Code: 2447 | Europe - 4800 |
|
$0.7135 | Buy Now |
DISTI #
87858569
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Verical | Trans MOSFET N-CH 80V 74A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2447 | Americas - 4800 |
|
$0.7102 | Buy Now |
DISTI #
89538696
|
Verical | Trans MOSFET N-CH 80V 74A 3-Pin(2+Tab) D2PAK T/R Min Qty: 83 Package Multiple: 1 | Americas - 425 |
|
$1.0502 / $1.1453 | Buy Now |
DISTI #
PSMN012-80BS.118
|
TME | Transistor: N-MOSFET, unipolar, 80V, 74A, Idm: 295A, 148W Min Qty: 1 | 0 |
|
$0.8700 / $1.3200 | RFQ |
DISTI #
PSMN012-80BS,118
|
Avnet Silica | Trans MOSFET NCH 80V 74A 3Pin2Tab D2PAK TR (Alt: PSMN012-80BS,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
DISTI #
PSMN012-80BS,118
|
EBV Elektronik | Trans MOSFET NCH 80V 74A 3Pin2Tab D2PAK TR (Alt: PSMN012-80BS,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
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PSMN012-80BS,118
Nexperia
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Datasheet
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PSMN012-80BS,118
Nexperia
PSMN012-80BS - N-channel 80 V 11 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | D2PAK | |
Package Description | D2PAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT404 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 74 A | |
Drain-source On Resistance-Max | 0.011 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 295 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The recommended PCB footprint for PSMN012-80BS,118 is a standard SOT223 package footprint with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C, and follow proper thermal management and cooling techniques.
The maximum allowed voltage on the gate of PSMN012-80BS,118 is ±20V, exceeding which may cause damage to the device.
Yes, PSMN012-80BS,118 is suitable for high-frequency switching applications up to 100 kHz, but ensure that the device is properly snubbed and the layout is optimized for high-frequency operation.
To protect PSMN012-80BS,118 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.