Part Details for PSMN012-80BS,118 by NXP Semiconductors
Results Overview of PSMN012-80BS,118 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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PSMN012-80BS,118 Information
PSMN012-80BS,118 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN012-80BS,118
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 2481 |
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RFQ |
Part Details for PSMN012-80BS,118
PSMN012-80BS,118 CAD Models
PSMN012-80BS,118 Part Data Attributes
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PSMN012-80BS,118
NXP Semiconductors
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Datasheet
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PSMN012-80BS,118
NXP Semiconductors
PSMN012-80BS - N-channel 80 V 11 mΩ standard level MOSFET in D2PAK D2PAK 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | D2PAK | |
Pin Count | 3 | |
Manufacturer Package Code | SOT404 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 74 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 148 W | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Time@Peak Reflow Temperature-Max (s) | 30 |
PSMN012-80BS,118 Frequently Asked Questions (FAQ)
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NXP provides a recommended PCB layout in the application note AN11160, which includes guidelines for thermal pad design, copper thickness, and via placement to ensure optimal thermal performance.
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The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. NXP provides a gate resistor selection guide in the application note AN11159, which helps engineers choose the optimal value based on their design parameters.
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Although the datasheet specifies a maximum gate-source voltage of ±20V, it's essential to note that the absolute maximum rating is ±30V. However, it's recommended to keep the gate voltage within the specified range to ensure reliable operation and prevent damage to the device.
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The PSMN012-80BS,118 is an AEC-Q101 qualified device, making it suitable for automotive and high-reliability applications. However, it's essential to ensure that the device is used within the specified operating conditions and that the application meets the required safety and reliability standards.
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NXP recommends using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK to ensure optimal thermal performance. The TIM should be applied according to the manufacturer's instructions, and the device should be mounted using a suitable attachment method, such as soldering or clip attachment.