Datasheets
PSMN012-80BS,118 by:

PSMN012-80BS - N-channel 80 V 11 mΩ standard level MOSFET in D2PAK D2PAK 3-Pin

Part Details for PSMN012-80BS,118 by NXP Semiconductors

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PSMN012-80BS,118 Information

PSMN012-80BS,118 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PSMN012-80BS,118

Part # Distributor Description Stock Price Buy
Vyrian Transistors 2481
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Part Details for PSMN012-80BS,118

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PSMN012-80BS,118 Part Data Attributes

PSMN012-80BS,118 NXP Semiconductors
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PSMN012-80BS,118 NXP Semiconductors PSMN012-80BS - N-channel 80 V 11 mΩ standard level MOSFET in D2PAK D2PAK 3-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code D2PAK
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 74 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 148 W
Surface Mount YES
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

PSMN012-80BS,118 Related Parts

PSMN012-80BS,118 Frequently Asked Questions (FAQ)

  • NXP provides a recommended PCB layout in the application note AN11160, which includes guidelines for thermal pad design, copper thickness, and via placement to ensure optimal thermal performance.

  • The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. NXP provides a gate resistor selection guide in the application note AN11159, which helps engineers choose the optimal value based on their design parameters.

  • Although the datasheet specifies a maximum gate-source voltage of ±20V, it's essential to note that the absolute maximum rating is ±30V. However, it's recommended to keep the gate voltage within the specified range to ensure reliable operation and prevent damage to the device.

  • The PSMN012-80BS,118 is an AEC-Q101 qualified device, making it suitable for automotive and high-reliability applications. However, it's essential to ensure that the device is used within the specified operating conditions and that the application meets the required safety and reliability standards.

  • NXP recommends using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK to ensure optimal thermal performance. The TIM should be applied according to the manufacturer's instructions, and the device should be mounted using a suitable attachment method, such as soldering or clip attachment.

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