Datasheets
PSMN011-60MSX by:

PSMN011-60MS - N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33

Part Details for PSMN011-60MSX by NXP Semiconductors

Results Overview of PSMN011-60MSX by NXP Semiconductors

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PSMN011-60MSX Information

PSMN011-60MSX by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PSMN011-60MSX

Part # Distributor Description Stock Price Buy
Vyrian Transistors 7492
RFQ

Part Details for PSMN011-60MSX

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PSMN011-60MSX Part Data Attributes

PSMN011-60MSX NXP Semiconductors
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PSMN011-60MSX NXP Semiconductors PSMN011-60MS - N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Pin Count 8
Manufacturer Package Code SOT1210
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 58 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 80 W
Surface Mount YES

PSMN011-60MSX Related Parts

PSMN011-60MSX Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the PSMN011-60MSX is -55°C to 150°C.

  • To ensure reliability, follow the recommended assembly and soldering guidelines, and ensure proper thermal management and voltage derating.

  • Yes, the PSMN011-60MSX is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize EMI and ringing.

  • The recommended gate drive voltage for the PSMN011-60MSX is between 10 V and 15 V, with a maximum gate-source voltage of 20 V.

  • Handle the device with ESD-protective equipment, and ensure proper grounding and shielding during assembly and testing.

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