Part Details for PSMN009-100P by Nexperia
Results Overview of PSMN009-100P by Nexperia
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
PSMN009-100P Information
PSMN009-100P by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PSMN009-100P
PSMN009-100P CAD Models
PSMN009-100P Part Data Attributes
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PSMN009-100P
Nexperia
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Datasheet
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PSMN009-100P
Nexperia
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-02-01 | |
| Samacsys Manufacturer | Nexperia | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0088 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN009-100P
This table gives cross-reference parts and alternative options found for PSMN009-100P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN009-100P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| PSMN009-100P | NXP Semiconductors | Check for Price | TRANSISTOR 75 A, 100 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | PSMN009-100P vs PSMN009-100P |
| BUK7510-100B,127 | Nexperia | Check for Price | N-channel TrenchMOS standard level FET@en-us TO-220 3-Pin | PSMN009-100P vs BUK7510-100B,127 |
| BUK9510-100B | NXP Semiconductors | Check for Price | 75A, 100V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | PSMN009-100P vs BUK9510-100B |
| BUK9515-100A | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN009-100P vs BUK9515-100A |
| PSMN015-100P | NXP Semiconductors | Check for Price | 75A, 100V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | PSMN009-100P vs PSMN015-100P |
| BUK7515-100A | Nexperia | Check for Price | Power Field-Effect Transistor | PSMN009-100P vs BUK7515-100A |
| BUK9515-100A,127 | NXP Semiconductors | Check for Price | N-channel TrenchMOS logic level FET TO-220 3-Pin | PSMN009-100P vs BUK9515-100A,127 |
| BUK9515-100A,127 | Nexperia | Check for Price | N-channel TrenchMOS logic level FET@en-us TO-220 3-Pin | PSMN009-100P vs BUK9515-100A,127 |
| BUK7510-100B,127 | NXP Semiconductors | Check for Price | N-channel TrenchMOS standard level FET TO-220 3-Pin | PSMN009-100P vs BUK7510-100B,127 |
| BUK7515-100A,127 | Nexperia | Check for Price | N-channel TrenchMOS standard level FET@en-us TO-220 3-Pin | PSMN009-100P vs BUK7515-100A,127 |
PSMN009-100P Frequently Asked Questions (FAQ)
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Nexperia provides a recommended PCB footprint in their application note AN11173, which includes a land pattern and soldering guidelines for the PSMN009-100P package.
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To ensure reliable operation in high-temperature environments, it's essential to follow Nexperia's guidelines for thermal management, including proper heat sinking, thermal interface materials, and derating the device's power dissipation according to the ambient temperature.
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Although the datasheet specifies a maximum gate-source voltage of ±20V, Nexperia recommends limiting the gate voltage to ±15V to ensure reliable operation and prevent damage to the device.
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Yes, PSMN009-100P is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the PCB layout and component selection are optimized for high-frequency operation.
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To protect PSMN009-100P from ESD, follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected package. Additionally, consider adding ESD protection components, such as TVS diodes, to the PCB design.