Part Details for PSMN009-100B,118 by NXP Semiconductors
Results Overview of PSMN009-100B,118 by NXP Semiconductors
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PSMN009-100B,118 Information
PSMN009-100B,118 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PSMN009-100B,118
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86006991
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Verical | Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R Min Qty: 205 Package Multiple: 1 Date Code: 1201 | Americas - 2038 |
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$1.1370 / $1.8375 | Buy Now |
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DISTI #
86022721
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Verical | Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R Min Qty: 205 Package Multiple: 1 Date Code: 1001 | Americas - 1263 |
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$1.1370 / $1.8375 | Buy Now |
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DISTI #
86033188
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Verical | Trans MOSFET N-CH 100V 75A 3-Pin(2+Tab) D2PAK T/R Min Qty: 205 Package Multiple: 1 Date Code: 1601 | Americas - 800 |
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$1.1370 / $1.8375 | Buy Now |
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Rochester Electronics | PSMN009-100B - 75A, 100V, 0.0088ohm, N-Channel Power MOSFET, D2PAK RoHS: Compliant pbFree: Yes Status: Active Min Qty: 1 | 12151 |
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$0.9096 / $1.4700 | Buy Now |
Part Details for PSMN009-100B,118
PSMN009-100B,118 CAD Models
PSMN009-100B,118 Part Data Attributes
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PSMN009-100B,118
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
PSMN009-100B,118
NXP Semiconductors
N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT404 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0088 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN009-100B,118
This table gives cross-reference parts and alternative options found for PSMN009-100B,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN009-100B,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFS4410PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | PSMN009-100B,118 vs IRFS4410PBF |
| IRFS4410 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 96A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | PSMN009-100B,118 vs IRFS4410 |
| IRFS4410TRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | PSMN009-100B,118 vs IRFS4410TRLPBF |
PSMN009-100B,118 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for PSMN009-100B,118 is -55°C to 175°C.
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To ensure safe operating area (SOA) for PSMN009-100B,118, follow the guidelines in the datasheet for voltage, current, and power dissipation. Additionally, consider factors like thermal management, PCB design, and component selection to prevent overheating and electrical overstress.
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The recommended gate drive voltage for PSMN009-100B,118 is between 4.5V and 10V, with a typical value of 5V. However, the optimal gate drive voltage may vary depending on the specific application and requirements.
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To handle ESD protection for PSMN009-100B,118, follow proper handling and storage procedures, use ESD-protective packaging and materials, and consider adding external ESD protection devices or circuits in the application design.
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The maximum allowed voltage for the drain-source (Vds) pin is 100V, and for the gate-source (Vgs) pin is ±20V.