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PMXB75UPE - 20 V, P-channel Trench MOSFET@en-us DFN 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PMXB75UPEZ by Nexperia is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1727-2314-1-ND
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DigiKey | MOSFET P-CH 20V 2.9A DFN1010D-3 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
11768 In Stock |
|
$0.0610 / $0.4000 | Buy Now |
DISTI #
PMXB75UPEZ
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Avnet Americas | Trans MOSFET P-CH 20V 2.9A 3-Pin DFN T/R - Tape and Reel (Alt: PMXB75UPEZ) RoHS: Compliant Min Qty: 15000 Package Multiple: 5000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.0529 / $0.0583 | Buy Now |
DISTI #
771-PMXB75UPEZ
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Mouser Electronics | MOSFETs N-channel TrenchMOS standard level FET RoHS: Compliant | 28365 |
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$0.0600 / $0.3800 | Buy Now |
DISTI #
86006437
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Verical | Trans MOSFET P-CH 20V 2.9A 3-Pin DFN-D EP T/R RoHS: Compliant Min Qty: 4033 Package Multiple: 1 Date Code: 2201 | Americas - 138879 |
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$0.0930 | Buy Now |
DISTI #
86032347
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Verical | Trans MOSFET P-CH 20V 2.9A 3-Pin DFN-D EP T/R RoHS: Compliant Min Qty: 4033 Package Multiple: 1 Date Code: 2101 | Americas - 10000 |
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$0.0930 | Buy Now |
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Rochester Electronics | PMXB75UPE - Small Signal Field-Effect Transistor, 2.9A, 20V, P-Channel, MOSFET, DFN1010D-3 RoHS: Compliant Status: Active Min Qty: 1 | 148879 |
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$0.0461 / $0.0744 | Buy Now |
DISTI #
PMXB75UPEZ
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TTI | MOSFETs N-channel TrenchMOS standard level FET RoHS: Compliant pbFree: Pb-Free Min Qty: 15000 Package Multiple: 5000 Container: Reel | Americas - 0 |
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$0.0570 / $0.0620 | Buy Now |
DISTI #
PMXB75UPEZ
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Avnet Asia | Trans MOSFET P-CH 20V 2.9A 3-Pin DFN T/R (Alt: PMXB75UPEZ) RoHS: Compliant Min Qty: 15000 Package Multiple: 5000 Lead time: 8 Weeks, 0 Days | 0 |
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$0.0548 / $0.0613 | Buy Now |
DISTI #
PMXB75UPEZ
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Avnet Silica | Trans MOSFET PCH 20V 29A 3Pin DFN TR (Alt: PMXB75UPEZ) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
PMXB75UPEZ
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EBV Elektronik | Trans MOSFET PCH 20V 29A 3Pin DFN TR (Alt: PMXB75UPEZ) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 10 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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PMXB75UPEZ
Nexperia
Buy Now
Datasheet
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PMXB75UPEZ
Nexperia
PMXB75UPE - 20 V, P-channel Trench MOSFET@en-us DFN 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | DFN | |
Package Description | DFN1010D-3, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT1215 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Nexperia | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 2.9 A | |
Drain-source On Resistance-Max | 0.085 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
A good PCB layout for optimal thermal performance involves placing the PMXB75UPEZ near a thermal pad or a heat sink, using a large copper area for heat dissipation, and minimizing thermal resistance by using thermal vias.
To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design guidelines, use a suitable heat sink, and consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
The recommended soldering conditions for the PMXB75UPEZ include a peak temperature of 260°C, a soldering time of 10 seconds, and a soldering method that follows the IPC J-STD-020 standard.
To protect the PMXB75UPEZ from electrostatic discharge (ESD), it's essential to follow proper ESD handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design.
The PMXB75UPEZ's power MOSFET structure requires careful consideration of gate-source voltage, gate-drain capacitance, and drain-source resistance when designing the circuit to ensure optimal performance and minimize losses.