Datasheets
PMXB75UPEZ by:

PMXB75UPE - 20 V, P-channel Trench MOSFET@en-us DFN 3-Pin

Part Details for PMXB75UPEZ by Nexperia

Results Overview of PMXB75UPEZ by Nexperia

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PMXB75UPEZ Information

PMXB75UPEZ by Nexperia is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PMXB75UPEZ

Part # Distributor Description Stock Price Buy
DISTI # 1727-2314-1-ND
DigiKey MOSFET P-CH 20V 2.9A DFN1010D-3 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 11768
In Stock
  • 1 $0.4000
  • 10 $0.2630
  • 100 $0.1208
  • 500 $0.1092
  • 1,000 $0.0977
  • 5,000 $0.0683
  • 10,000 $0.0662
  • 15,000 $0.0646
  • 25,000 $0.0630
  • 125,000 $0.0610
$0.0610 / $0.4000 Buy Now
DISTI # PMXB75UPEZ
Avnet Americas Trans MOSFET P-CH 20V 2.9A 3-Pin DFN T/R - Tape and Reel (Alt: PMXB75UPEZ) RoHS: Compliant Min Qty: 15000 Package Multiple: 5000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 15,000 $0.0583
  • 25,000 $0.0568
  • 40,000 $0.0554
  • 75,000 $0.0541
  • 150,000 $0.0529
$0.0529 / $0.0583 Buy Now
DISTI # 771-PMXB75UPEZ
Mouser Electronics MOSFETs N-channel TrenchMOS standard level FET RoHS: Compliant 28365
  • 1 $0.3800
  • 10 $0.2520
  • 100 $0.1150
  • 500 $0.1040
  • 1,000 $0.0930
  • 2,500 $0.0850
  • 5,000 $0.0650
  • 10,000 $0.0630
  • 25,000 $0.0600
$0.0600 / $0.3800 Buy Now
DISTI # 86006437
Verical Trans MOSFET P-CH 20V 2.9A 3-Pin DFN-D EP T/R RoHS: Compliant Min Qty: 4033 Package Multiple: 1 Date Code: 2201 Americas - 138879
  • 4,033 $0.0930
$0.0930 Buy Now
DISTI # 86032347
Verical Trans MOSFET P-CH 20V 2.9A 3-Pin DFN-D EP T/R RoHS: Compliant Min Qty: 4033 Package Multiple: 1 Date Code: 2101 Americas - 10000
  • 4,033 $0.0930
$0.0930 Buy Now
Rochester Electronics PMXB75UPE - Small Signal Field-Effect Transistor, 2.9A, 20V, P-Channel, MOSFET, DFN1010D-3 RoHS: Compliant Status: Active Min Qty: 1 148879
  • 100 $0.0744
  • 500 $0.0670
  • 1,000 $0.0618
  • 10,000 $0.0551
  • 100,000 $0.0461
$0.0461 / $0.0744 Buy Now
DISTI # PMXB75UPEZ
TTI MOSFETs N-channel TrenchMOS standard level FET RoHS: Compliant pbFree: Pb-Free Min Qty: 15000 Package Multiple: 5000 Container: Reel Americas - 0
  • 15,000 $0.0620
  • 25,000 $0.0600
  • 40,000 $0.0590
  • 75,000 $0.0580
  • 150,000 $0.0570
$0.0570 / $0.0620 Buy Now
DISTI # PMXB75UPEZ
Avnet Asia Trans MOSFET P-CH 20V 2.9A 3-Pin DFN T/R (Alt: PMXB75UPEZ) RoHS: Compliant Min Qty: 15000 Package Multiple: 5000 Lead time: 8 Weeks, 0 Days 0
  • 15,000 $0.0613
  • 30,000 $0.0605
  • 45,000 $0.0597
  • 75,000 $0.0590
  • 150,000 $0.0575
  • 375,000 $0.0561
  • 750,000 $0.0548
$0.0548 / $0.0613 Buy Now
DISTI # PMXB75UPEZ
Avnet Silica Trans MOSFET PCH 20V 29A 3Pin DFN TR (Alt: PMXB75UPEZ) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now
DISTI # PMXB75UPEZ
EBV Elektronik Trans MOSFET PCH 20V 29A 3Pin DFN TR (Alt: PMXB75UPEZ) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
LCSC 20V 2.9A 69m4.5V2.9A 317mW 0.68V 1 piece P-channel DFN1010-3 MOSFETs ROHS 32
  • 1 $0.3848
  • 10 $0.3063
  • 30 $0.2716
  • 100 $0.2294
  • 500 $0.2113
  • 1,000 $0.1992
$0.1992 / $0.3848 Buy Now
Vyrian Transistors 1035671
RFQ

Part Details for PMXB75UPEZ

PMXB75UPEZ CAD Models

PMXB75UPEZ Part Data Attributes

PMXB75UPEZ Nexperia
Buy Now Datasheet
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PMXB75UPEZ Nexperia PMXB75UPE - 20 V, P-channel Trench MOSFET@en-us DFN 3-Pin
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code DFN
Package Description DFN1010D-3, 3 PIN
Pin Count 3
Manufacturer Package Code SOT1215
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Nexperia
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.9 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

PMXB75UPEZ Related Parts

PMXB75UPEZ Frequently Asked Questions (FAQ)

  • A good PCB layout for optimal thermal performance involves placing the PMXB75UPEZ near a thermal pad or a heat sink, using a large copper area for heat dissipation, and minimizing thermal resistance by using thermal vias.

  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design guidelines, use a suitable heat sink, and consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.

  • The recommended soldering conditions for the PMXB75UPEZ include a peak temperature of 260°C, a soldering time of 10 seconds, and a soldering method that follows the IPC J-STD-020 standard.

  • To protect the PMXB75UPEZ from electrostatic discharge (ESD), it's essential to follow proper ESD handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design.

  • The PMXB75UPEZ's power MOSFET structure requires careful consideration of gate-source voltage, gate-drain capacitance, and drain-source resistance when designing the circuit to ensure optimal performance and minimize losses.

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