Part Details for PHN210T by Philips Semiconductors
Results Overview of PHN210T by Philips Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
PHN210T Information
PHN210T by Philips Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PHN210T
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 3.4A I(D), 30V, 0.1OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA | 160 |
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$0.2600 | Buy Now |
Part Details for PHN210T
PHN210T CAD Models
PHN210T Part Data Attributes
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PHN210T
Philips Semiconductors
Buy Now
Datasheet
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PHN210T
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Drain Current-Max (ID) | 3.4 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
PHN210T Frequently Asked Questions (FAQ)
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A good PCB layout for the PHN210T involves keeping the input and output tracks as short as possible, using a solid ground plane, and placing decoupling capacitors close to the device. Additionally, it's recommended to use a separate analog and digital ground to minimize noise coupling.
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To ensure proper biasing, it's essential to follow the recommended biasing scheme in the datasheet. This typically involves setting the VCC voltage to 5V, and the VEE voltage to -5V. Additionally, the input common-mode voltage should be set to around 2.5V to ensure optimal linearity.
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The maximum allowable power dissipation for the PHN210T is typically around 500mW. Exceeding this limit can cause the device to overheat, leading to reduced performance and potentially even damage.
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To minimize noise and interference, it's recommended to use proper shielding, grounding, and decoupling techniques. Additionally, keeping the input and output tracks as short as possible, and using a low-pass filter at the output can help reduce noise and interference.
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The recommended operating temperature range for the PHN210T is typically between -40°C to 85°C. Operating the device outside of this range can affect its performance and reliability.