Part Details for PHN210T by NXP Semiconductors
Results Overview of PHN210T by NXP Semiconductors
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
PHN210T Information
PHN210T by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PHN210T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 1691 |
|
RFQ | ||
|
|
ComSIT USA | DUAL N-CHANNEL ENHANCEMENT MODE TRENCHMOS TRANSISTOR Power Field-Effect Transistor, 3.4A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA ECCN: EAR99 RoHS: Compliant |
|
|
RFQ | |
|
|
Win Source Electronics | Dual N-channel enhancement mode | 137500 |
|
$0.3188 / $0.4782 | Buy Now |
Part Details for PHN210T
PHN210T CAD Models
PHN210T Part Data Attributes
|
|
PHN210T
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
PHN210T
NXP Semiconductors
TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOIC | |
| Package Description | PLASTIC, SOP-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 13 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 3.4 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PHN210T
This table gives cross-reference parts and alternative options found for PHN210T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHN210T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PHN210-TAPE-13 | NXP Semiconductors | Check for Price | TRANSISTOR 3.5 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | PHN210T vs PHN210-TAPE-13 |
| PHN210T | Nexperia | Check for Price | Power Field-Effect Transistor | PHN210T vs PHN210T |
| 934055451118 | NXP Semiconductors | Check for Price | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power | PHN210T vs 934055451118 |
| PHN210T/T3 | NXP Semiconductors | Check for Price | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power | PHN210T vs PHN210T/T3 |
| PHN210T/R | NXP Semiconductors | Check for Price | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power | PHN210T vs PHN210T/R |
PHN210T Frequently Asked Questions (FAQ)
-
NXP provides a recommended PCB layout in the application note AN11555, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
-
The PHN210T has a programmable output voltage range. You can configure it using the I2C interface to set the output voltage between 0.6 V to 3.3 V in 10 mV steps. Refer to the datasheet section 8.3.1 for more information on the voltage setting register.
-
The PHN210T has a maximum current capability of 2 A. However, the actual current limit depends on the input voltage, output voltage, and thermal conditions. It's essential to consider the power dissipation and thermal management to ensure reliable operation.
-
The PHN210T has a built-in overcurrent protection feature. You can set the overcurrent limit using the I2C interface. When the output current exceeds the set limit, the device will enter a fault state and shut down. Refer to the datasheet section 8.3.2 for more information on the overcurrent protection register.
-
The PHN210T has a thermal shutdown temperature of 150°C. When the junction temperature exceeds this limit, the device will shut down to prevent damage. It's essential to ensure proper thermal management and heat sinking to prevent overheating.