Part Details for PHN210 by NXP Semiconductors
Results Overview of PHN210 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Aerospace and Defense
Agriculture Technology
Robotics and Drones
PHN210 Information
PHN210 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PHN210
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 3.4 A, 30 V, 0.1 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET, MS-012AA | 303 |
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$0.3150 / $0.6750 | Buy Now |
Part Details for PHN210
PHN210 CAD Models
PHN210 Part Data Attributes
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PHN210
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
PHN210
NXP Semiconductors
TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOIC | |
| Package Description | PLASTIC, SO-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 13 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 3.4 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e4 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 4 W | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 140 ns | |
| Turn-on Time-Max (ton) | 40 ns |
Alternate Parts for PHN210
This table gives cross-reference parts and alternative options found for PHN210. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHN210, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 934033430118 | NXP Semiconductors | Check for Price | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power | PHN210 vs 934033430118 |
| PHN210-TAPE-7 | NXP Semiconductors | Check for Price | TRANSISTOR 3.5 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | PHN210 vs PHN210-TAPE-7 |
| PHN210T/T3 | NXP Semiconductors | Check for Price | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power | PHN210 vs PHN210T/T3 |
| PHN210T,118 | Nexperia | Check for Price | PHN210T - Dual N-channel TrenchMOS intermediate level FET@en-us SOIC 8-Pin | PHN210 vs PHN210T,118 |
| PHN210 | Nexperia | Check for Price | Power Field-Effect Transistor | PHN210 vs PHN210 |
| 934055451118 | NXP Semiconductors | Check for Price | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power | PHN210 vs 934055451118 |
| PHN210T | Nexperia | Check for Price | Power Field-Effect Transistor | PHN210 vs PHN210T |
| PHN210-TAPE-13 | NXP Semiconductors | Check for Price | TRANSISTOR 3.5 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | PHN210 vs PHN210-TAPE-13 |
| PHN210T/R | NXP Semiconductors | Check for Price | TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SMD, SO-8, FET General Purpose Power | PHN210 vs PHN210T/R |