Part Details for PHD36N03LT by NXP Semiconductors
Results Overview of PHD36N03LT by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
PHD36N03LT Information
PHD36N03LT by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for PHD36N03LT
PHD36N03LT CAD Models
PHD36N03LT Part Data Attributes
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PHD36N03LT
NXP Semiconductors
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Datasheet
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PHD36N03LT
NXP Semiconductors
43.4A, 30V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-252 | |
| Package Description | PLASTIC, SC-63, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 43.4 A | |
| Drain-source On Resistance-Max | 0.017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 57.6 W | |
| Pulsed Drain Current-Max (IDM) | 173.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PHD36N03LT
This table gives cross-reference parts and alternative options found for PHD36N03LT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHD36N03LT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| CSD17308Q3T | Texas Instruments | $0.4086 | 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm 8-VSON-CLIP -55 to 150 | PHD36N03LT vs CSD17308Q3T |
| 934057949118 | Nexperia | Check for Price | Power Field-Effect Transistor | PHD36N03LT vs 934057949118 |
| PHD36N03LT | Nexperia | Check for Price | Power Field-Effect Transistor | PHD36N03LT vs PHD36N03LT |
PHD36N03LT Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the PHD36N03LT is not explicitly stated in the datasheet. However, NXP provides an SOA graph in the application note AN11158, which shows the maximum allowed voltage and current combinations for the device.
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To calculate the junction temperature (Tj) of the PHD36N03LT, you can use the following formula: Tj = Tc + (Rθja * Pd), where Tc is the case temperature, Rθja is the thermal resistance from junction to ambient, and Pd is the power dissipation. The thermal resistance values can be found in the datasheet.
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NXP provides guidelines for PCB layout and thermal design in the application note AN11158. It recommends a minimum of 2 oz copper thickness, a thermal pad size of at least 3 mm x 3 mm, and a thermal via array with a minimum of 10 vias.
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Yes, the PHD36N03LT is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the PCB layout is optimized for high-frequency operation.
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To protect the PHD36N03LT from ESD, follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected package. Additionally, consider adding ESD protection components, such as TVS diodes, to the PCB design.