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Transistors / Power Field-Effect Transistors / PHD21N06LT,118
Datasheets
PHD21N06LT,118 by:
Nexperia

N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin

Part Details for PHD21N06LT,118 by Nexperia

Results Overview of PHD21N06LT,118 by Nexperia

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PHD21N06LT,118 Information

PHD21N06LT,118 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for PHD21N06LT,118

PHD21N06LT,118 Part Data Attributes

Parametric Data
PHD21N06LT,118 Nexperia
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PHD21N06LT,118 Nexperia N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Part Package Code DPAK
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code SOT428
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 34 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 76 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PHD21N06LT,118

This table gives cross-reference parts and alternative options found for PHD21N06LT,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHD21N06LT,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PHD21N06LT/T3 Nexperia Check for Price Power Field-Effect Transistor PHD21N06LT,118 vs PHD21N06LT/T3
PHD21N06LT/T3 NXP Semiconductors Check for Price TRANSISTOR 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power PHD21N06LT,118 vs PHD21N06LT/T3
Part Number Manufacturer Composite Price Description Compare
AUIRFR024NTRL Infineon Technologies AG $0.6287 Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 PHD21N06LT,118 vs AUIRFR024NTRL
BUZ10 TT Electronics Power and Hybrid / Semelab Limited Check for Price 19.3A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET PHD21N06LT,118 vs BUZ10
IRFR024NPBF International Rectifier Check for Price Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 PHD21N06LT,118 vs IRFR024NPBF
HUFA76419D3 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PHD21N06LT,118 vs HUFA76419D3
HUF75309P3 Harris Semiconductor Check for Price Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB PHD21N06LT,118 vs HUF75309P3
IRFZ30 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN PHD21N06LT,118 vs IRFZ30
BUZ71L Motorola Mobility LLC Check for Price 12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PHD21N06LT,118 vs BUZ71L
BUK7575-55 NXP Semiconductors Check for Price TRANSISTOR 19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power PHD21N06LT,118 vs BUK7575-55
RFD14N06L Harris Semiconductor Check for Price Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA PHD21N06LT,118 vs RFD14N06L
934056615118 Nexperia Check for Price Power Field-Effect Transistor PHD21N06LT,118 vs 934056615118

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