Part Details for PHD20N06T,118 by NXP Semiconductors
Results Overview of PHD20N06T,118 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Industrial Automation
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Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
PHD20N06T,118 Information
PHD20N06T,118 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PHD20N06T,118
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 18A, 55V, 0.077ohm, N-Channel Power MOSFET, TO-252 RoHS: Compliant Status: Obsolete Min Qty: 1 | 150 |
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$0.1798 / $0.2900 | Buy Now |
Part Details for PHD20N06T,118
PHD20N06T,118 CAD Models
PHD20N06T,118 Part Data Attributes
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PHD20N06T,118
NXP Semiconductors
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Datasheet
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PHD20N06T,118
NXP Semiconductors
PHD20N06T - N-channel TrenchMOS standard level FET DPAK 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | DPAK | |
| Package Description | PLASTIC, SC-63, DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT428 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Avalanche Energy Rating (Eas) | 36 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.077 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 51 W | |
| Pulsed Drain Current-Max (IDM) | 73 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PHD20N06T,118
This table gives cross-reference parts and alternative options found for PHD20N06T,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHD20N06T,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STD20NE06 | STMicroelectronics | Check for Price | 20A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | PHD20N06T,118 vs STD20NE06 |
| STD20NE06T4 | STMicroelectronics | Check for Price | 20A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | PHD20N06T,118 vs STD20NE06T4 |
| MTD20N06HDLT4G | onsemi | Check for Price | 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 | PHD20N06T,118 vs MTD20N06HDLT4G |
| PHD20N06T | Nexperia | Check for Price | Power Field-Effect Transistor | PHD20N06T,118 vs PHD20N06T |
| 934056617118 | NXP Semiconductors | Check for Price | TRANSISTOR 18 A, 55 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power | PHD20N06T,118 vs 934056617118 |
| MTD20N06HDL | onsemi | Check for Price | 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 | PHD20N06T,118 vs MTD20N06HDL |
| 934056617118 | Nexperia | Check for Price | Power Field-Effect Transistor | PHD20N06T,118 vs 934056617118 |
| MTD20N06HDL | Motorola Mobility LLC | Check for Price | 20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET | PHD20N06T,118 vs MTD20N06HDL |
| MTD20N06HDLT4 | Motorola Mobility LLC | Check for Price | 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET | PHD20N06T,118 vs MTD20N06HDLT4 |
| MTD20N06HDLT4 | onsemi | Check for Price | 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 | PHD20N06T,118 vs MTD20N06HDLT4 |
PHD20N06T,118 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the PHD20N06T,118 is not explicitly stated in the datasheet. However, NXP provides a SOA graph in the application note AN11158, which shows the maximum allowed voltage and current combinations for the device.
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The junction-to-case thermal resistance (RθJC) for the PHD20N06T,118 is not directly provided in the datasheet. However, you can calculate it using the thermal resistance values given in the datasheet (RθJA and RθJC) and the package dimensions. A detailed calculation method is provided in the NXP application note AN11506.
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NXP provides guidelines for PCB layout and thermal design in the application note AN11506. It recommends a minimum copper area of 1 cm² for the drain and source pins, and a thermal via array under the device to improve heat dissipation.
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While the PHD20N06T,118 is a power MOSFET, it's not optimized for high-frequency switching applications. The device has a relatively high gate charge (Qg) and output capacitance (Coss), which can lead to increased switching losses. For high-frequency applications, consider using a MOSFET with lower Qg and Coss, such as the NXP PSMN series.
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To ensure proper driving and biasing of the PHD20N06T,118, follow the guidelines in the NXP application note AN11158. This includes using a suitable gate driver, setting the correct gate-source voltage (Vgs), and ensuring the device is operated within the recommended bias conditions.