Datasheets
PH3135-65M by:

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, ROHS COMPLIANT, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

Part Details for PH3135-65M by MACOM

Results Overview of PH3135-65M by MACOM

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PH3135-65M Information

PH3135-65M by MACOM is an RF Power Bipolar Transistor.
RF Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PH3135-65M

Part # Distributor Description Stock Price Buy
DISTI # 1465-1207-ND
DigiKey RF TRANS NPN 65V Min Qty: 20 Lead time: 26 Weeks Container: Tray Temporarily Out of Stock
  • 20 $503.3200
$503.3200 Buy Now
DISTI # 937-PH3135-65M
Mouser Electronics RF Bipolar Transistors Transistor,Bipolar,65W,36V,3.10-3.50GHz RoHS: Compliant 0
  • 20 $480.8200
$480.8200 Order Now
DISTI # PH3135-65M
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 20 0
  • 20 $429.5600
$429.5600 Buy Now

Part Details for PH3135-65M

PH3135-65M CAD Models

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PH3135-65M Part Data Attributes

PH3135-65M MACOM
Buy Now Datasheet
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PH3135-65M MACOM RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN, ROHS COMPLIANT, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM INC
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature WITH EMITTER BALLASTING RESISTORS
Case Connection BASE
Collector Current-Max (IC) 7.5 A
Configuration SINGLE WITH BUILT-IN RESISTOR
Highest Frequency Band S BAND
JESD-30 Code S-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape SQUARE
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 420 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

PH3135-65M Related Parts

PH3135-65M Frequently Asked Questions (FAQ)

  • MACOM recommends a 4-layer PCB with a solid ground plane, and thermal vias under the device to dissipate heat. A thermal pad on the bottom of the device should be connected to a heat sink or a thermal management system.

  • The PH3135-65M requires a specific biasing scheme to achieve optimal performance. MACOM recommends using a voltage regulator to set the Vd (drain voltage) to 5V, and Id (drain current) to 650mA. The gate voltage (Vg) should be set to -2.5V to -3.5V for optimal performance.

  • The PH3135-65M has a maximum operating temperature of 150°C. However, MACOM recommends operating the device at a temperature below 125°C to ensure optimal performance and reliability.

  • The PH3135-65M is an ESD-sensitive device. MACOM recommends using ESD protection devices such as TVS diodes or ESD protection arrays on the input and output pins to prevent damage from electrostatic discharge.

  • The PH3135-65M should be stored in a dry, cool place away from direct sunlight. The device should be handled with anti-static precautions, such as using an anti-static wrist strap or mat, to prevent ESD damage.

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