Part Details for PDTC123JT by Nexperia
Results Overview of PDTC123JT by Nexperia
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
PDTC123JT Information
PDTC123JT by Nexperia is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PDTC123JT
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 50V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-236AB | 32983 |
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$0.0143 / $0.0440 | Buy Now |
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Chip Stock | 944090 |
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RFQ |
Part Details for PDTC123JT
PDTC123JT CAD Models
PDTC123JT Part Data Attributes
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PDTC123JT
Nexperia
Buy Now
Datasheet
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PDTC123JT
Nexperia
Small Signal Bipolar Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 1997-12-12 | |
| Samacsys Manufacturer | Nexperia | |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 21 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 2.5 pF | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.25 W | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 230 MHz | |
| VCEsat-Max | 0.1 V |
Alternate Parts for PDTC123JT
This table gives cross-reference parts and alternative options found for PDTC123JT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PDTC123JT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PDTC123JT,215 | Nexperia | $0.0304 | PDTC123JT - 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ@en-us TO-236 3-Pin | PDTC123JT vs PDTC123JT,215 |
| PDTC123JTTRL13 | NXP Semiconductors | Check for Price | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | PDTC123JT vs PDTC123JTTRL13 |
| PDTC123JTT/R | Nexperia | Check for Price | Small Signal Bipolar Transistor | PDTC123JT vs PDTC123JTT/R |
| PDTC123JT,235 | Nexperia | Check for Price | PDTC123JT - 50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ@en-us TO-236 3-Pin | PDTC123JT vs PDTC123JT,235 |
| PDTC123JT/A2 | Nexperia | Check for Price | Small Signal Bipolar Transistor | PDTC123JT vs PDTC123JT/A2 |
| PDTC123JT | NXP Semiconductors | Check for Price | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal | PDTC123JT vs PDTC123JT |
| PDTC123JT,235 | NXP Semiconductors | Check for Price | PDTC123J series - NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ TO-236 3-Pin | PDTC123JT vs PDTC123JT,235 |
| PDTC123JT,215 | NXP Semiconductors | Check for Price | PDTC123J series - NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ TO-236 3-Pin | PDTC123JT vs PDTC123JT,215 |
| PDTC123JTTRL | NXP Semiconductors | Check for Price | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | PDTC123JT vs PDTC123JTTRL |
| PDTC123JT-Q | Nexperia | Check for Price | Small Signal Bipolar Transistor | PDTC123JT vs PDTC123JT-Q |
PDTC123JT Frequently Asked Questions (FAQ)
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The recommended PCB footprint for PDTC123JT is a standard SOT23 package with a minimum pad size of 0.8 mm x 0.8 mm and a maximum pad size of 1.2 mm x 1.2 mm, with a non-solder mask defined (NSMD) pad shape.
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To ensure reliable operation of PDTC123JT in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, such as providing adequate heat sinking, using thermal vias, and minimizing thermal resistance between the device and the PCB.
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The maximum allowed voltage on the input pins of PDTC123JT is 5.5 V, which is the absolute maximum rating. However, for reliable operation, it is recommended to keep the input voltage within the recommended operating range of 2.7 V to 5.5 V.
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Yes, PDTC123JT can be used in a switching regulator application, but it is essential to ensure that the device is properly bypassed and decoupled to prevent voltage spikes and ringing. Additionally, the device's power dissipation and thermal performance should be carefully evaluated to ensure reliable operation.
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To handle ESD protection when working with PDTC123JT, it is recommended to follow proper ESD handling procedures, such as using an ESD wrist strap, ESD mat, or ESD-safe storage containers. Additionally, the device should be handled in a static-safe environment, and ESD-sensitive devices should be protected with ESD protection devices or diodes.