Part Details for PD55003TR-E by STMicroelectronics
Results Overview of PD55003TR-E by STMicroelectronics
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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PD55003TR-E Information
PD55003TR-E by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for PD55003TR-E
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
56P9882
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Newark | Rf Power |Stmicroelectronics PD55003TR-E RoHS: Not Compliant Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
497-19295-1-ND
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DigiKey | RF MOSFET LDMOS 12.5V POWERSO10 Min Qty: 1 Lead time: 23 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1178 In Stock |
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$5.1945 / $8.8300 | Buy Now |
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DISTI #
PD55003TR-E
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Avnet Americas | Transistor RF FET N-CH 40V 2.5A 500MHz 3-Pin PowerSO-10RF T/R - Tape and Reel (Alt: PD55003TR-E) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 23 Weeks, 0 Days Container: Reel | 600 |
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$4.5769 / $4.8666 | Buy Now |
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DISTI #
511-PD55003TR-E
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Mouser Electronics | RF MOSFET Transistors POWER R.F. RoHS: Compliant | 586 |
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$5.0500 / $8.8300 | Buy Now |
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STMicroelectronics | RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs RoHS: Compliant Min Qty: 1 | 586 |
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$5.4500 / $8.6500 | Buy Now |
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DISTI #
PD55003TR-E
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Avnet Silica | Transistor RF FET NCH 40V 25A 500MHz 3Pin PowerSO10RF TR (Alt: PD55003TR-E) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 17 Weeks, 0 Days | Silica - 12000 |
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Buy Now | |
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DISTI #
PD55003TR-E
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EBV Elektronik | Transistor RF FET NCH 40V 25A 500MHz 3Pin PowerSO10RF TR (Alt: PD55003TR-E) RoHS: Compliant Min Qty: 600 Package Multiple: 600 Lead time: 24 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 2518 |
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RFQ | |
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Win Source Electronics | FET RF 40V 500MHZ PWRSO-10 | 4100 |
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$7.9387 / $11.9080 | Buy Now |
Part Details for PD55003TR-E
PD55003TR-E CAD Models
PD55003TR-E Part Data Attributes
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PD55003TR-E
STMicroelectronics
Buy Now
Datasheet
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PD55003TR-E
STMicroelectronics
RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | SOT | |
| Package Description | ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN | |
| Pin Count | 10 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 23 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 2.5 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 165 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 31.7 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for PD55003TR-E
This table gives cross-reference parts and alternative options found for PD55003TR-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD55003TR-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| PD55003-E | STMicroelectronics | $7.4953 | RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs | PD55003TR-E vs PD55003-E |
| ARF464B | Microsemi Corporation | Check for Price | Transistor | PD55003TR-E vs ARF464B |
| PD55003-01 | STMicroelectronics | Check for Price | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, POWER, PLASTIC, FP-12 | PD55003TR-E vs PD55003-01 |
| PD55003S-E | STMicroelectronics | $8.0596 | RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs | PD55003TR-E vs PD55003S-E |
| PD55003S | STMicroelectronics | Check for Price | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, POWER, PLASTIC, SO-2 | PD55003TR-E vs PD55003S |
| ARF464A | Microsemi Corporation | Check for Price | Transistor | PD55003TR-E vs ARF464A |
| PD55003L-E | STMicroelectronics | $5.9580 | RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs | PD55003TR-E vs PD55003L-E |
| ARF464B | Advanced Power Technology | Check for Price | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247 | PD55003TR-E vs ARF464B |
PD55003TR-E Frequently Asked Questions (FAQ)
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STMicroelectronics recommends a 2-layer or 4-layer PCB with a solid ground plane and thermal vias to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended for optimal thermal performance.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and ensure good airflow around the device. Additionally, consider using a heat sink or thermal pad to dissipate heat efficiently.
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STMicroelectronics recommends using X7R or X5R ceramic capacitors with a minimum capacitance of 10uF for the input and output capacitors. The capacitor's voltage rating should be at least 1.5 times the maximum input voltage.
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To troubleshoot issues with the device's output voltage regulation, check the input voltage, output load, and PCB layout. Ensure that the input voltage is within the recommended range, the output load is within the specified current limit, and the PCB layout follows the recommended guidelines. Use an oscilloscope to measure the output voltage and check for any signs of oscillation or instability.
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Operating the device beyond the recommended specifications can lead to reduced reliability, decreased performance, and potentially cause damage to the device. It's essential to operate the device within the recommended specifications to ensure reliable and efficient operation.