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PBSS5540Z by:

Transistor

Part Details for PBSS5540Z by Philips Semiconductors

Results Overview of PBSS5540Z by Philips Semiconductors

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PBSS5540Z Information

PBSS5540Z by Philips Semiconductors is an Other Transistor.
Other Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for PBSS5540Z

Part # Distributor Description Stock Price Buy
Quest Components TRANSISTOR,BJT,PNP,40V V(BR)CEO,5A I(C),SOT-223 1969
  • 1 $0.5700
  • 159 $0.2660
  • 753 $0.2375
$0.2375 / $0.5700 Buy Now
Quest Components TRANSISTOR,BJT,PNP,40V V(BR)CEO,5A I(C),SOT-223 296
  • 1 $0.9500
  • 27 $0.5700
  • 106 $0.4750
$0.4750 / $0.9500 Buy Now
ComSIT USA 40 V LOW VCESAT PNP TRANSISTOR Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin ECCN: EAR99 RoHS: Not Compliant Stock DE - 40000
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for PBSS5540Z

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PBSS5540Z Part Data Attributes

PBSS5540Z Philips Semiconductors
Buy Now Datasheet
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PBSS5540Z Philips Semiconductors Transistor
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer PHILIPS SEMICONDUCTORS
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 5 A
Configuration SINGLE
DC Current Gain-Min (hFE) 250
Number of Elements 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 1.35 W
Surface Mount YES
Transition Frequency-Nom (fT) 50 MHz

PBSS5540Z Related Parts

PBSS5540Z Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the PBSS5540Z is -40°C to 150°C, although it can withstand storage temperatures from -55°C to 175°C.

  • To ensure proper biasing, connect the base to a voltage source through a resistor (Rb) and a capacitor (Cb) in parallel. The recommended values are Rb = 1 kΩ and Cb = 10 nF. This configuration helps to stabilize the bias voltage and reduce noise.

  • The maximum collector-emitter voltage (Vce) that the PBSS5540Z can handle is 40 V. Exceeding this voltage may lead to device damage or failure.

  • To protect the PBSS5540Z from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package. Avoid touching the device's pins or leads, and use ESD-safe tools and equipment.

  • The typical current gain (hFE) of the PBSS5540Z is around 100-150, although this value can vary depending on the specific application and operating conditions.

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