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Part Details for P2N2222A by onsemi
Results Overview of P2N2222A by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
P2N2222A Information
P2N2222A by onsemi is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for P2N2222A
P2N2222A CAD Models
P2N2222A Part Data Attributes
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P2N2222A
onsemi
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Datasheet
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P2N2222A
onsemi
600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | TO-92 | |
| Package Description | CYLINDRICAL, O-PBCY-T3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 29-11 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 0.6 A | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 75 | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.625 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 300 MHz | |
| Turn-off Time-Max (toff) | 285 ns | |
| Turn-on Time-Max (ton) | 35 ns |
Alternate Parts for P2N2222A
This table gives cross-reference parts and alternative options found for P2N2222A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of P2N2222A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| P2N2222A{AMMOPAK} | Continental Device India Ltd | Check for Price | Small Signal Bipolar Transistor, 1-Element, Silicon, TO-92 | P2N2222A vs P2N2222A{AMMOPAK} |
| KSP2222ATA_NL | Fairchild Semiconductor Corporation | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | P2N2222A vs KSP2222ATA_NL |
| KSP2222ATF | Fairchild Semiconductor Corporation | Check for Price | NPN Epitaxial Silicon Transistor, 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM, 2000/TAPE REEL | P2N2222A vs KSP2222ATF |
| P2N2222A(TAPE-REEL) | Continental Device India Ltd | Check for Price | Small Signal Bipolar Transistor, 1-Element, Silicon, TO-92 | P2N2222A vs P2N2222A(TAPE-REEL) |
| P2N2222ARL | onsemi | Check for Price | 600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN | P2N2222A vs P2N2222ARL |
| P2N2222A{TAPE-REEL} | Continental Device India Ltd | Check for Price | Small Signal Bipolar Transistor, 1-Element, Silicon, TO-92 | P2N2222A vs P2N2222A{TAPE-REEL} |
| KSP2222 | Fairchild Semiconductor Corporation | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | P2N2222A vs KSP2222 |
| KSP2222AJ18Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN | P2N2222A vs KSP2222AJ18Z |
| P2N2222ARL1G | onsemi | Check for Price | NPN Bipolar Transistor, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL | P2N2222A vs P2N2222ARL1G |
| KSP2222J05Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN | P2N2222A vs KSP2222J05Z |
P2N2222A Frequently Asked Questions (FAQ)
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The maximum collector current that can be handled by the P2N2222A is 500 mA, as specified in the datasheet. However, it's recommended to derate the current to ensure reliable operation and to prevent overheating.
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To ensure proper biasing for switching applications, make sure to provide a base current that is sufficient to saturate the transistor. A general rule of thumb is to provide a base current that is 1/10th to 1/20th of the collector current. Additionally, ensure that the base-emitter voltage is within the recommended range of 0.6-0.8V.
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The maximum power dissipation of the P2N2222A is 625 mW, as specified in the datasheet. However, this value can be derated based on the ambient temperature and the thermal resistance of the package.
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While the P2N2222A can be used as a switch, it's not ideal for high-frequency applications due to its relatively high transition frequency (ft) of 250 MHz. For high-frequency applications, consider using a transistor with a higher ft, such as the 2N3904 or the MMBT2222A.
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To protect the P2N2222A from ESD, ensure that all handling and assembly procedures follow proper ESD precautions, such as using anti-static wrist straps, mats, and packaging materials. Additionally, consider adding ESD protection devices, such as TVS diodes or ESD protection arrays, to the circuit design.