Part Details for OM6011SAT by Infineon Technologies AG
Results Overview of OM6011SAT by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
Industrial Automation
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
OM6011SAT Information
OM6011SAT by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for OM6011SAT
OM6011SAT CAD Models
OM6011SAT Part Data Attributes
|
|
OM6011SAT
Infineon Technologies AG
Buy Now
|
Compare Parts:
OM6011SAT
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, S-MSFM-P3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | S-MSFM-P3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for OM6011SAT
This table gives cross-reference parts and alternative options found for OM6011SAT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of OM6011SAT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFN440 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 6.1A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | OM6011SAT vs IRFN440 |
| 2N7228TX | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | OM6011SAT vs 2N7228TX |
| JANTXV2N7228 | Advanced Power Technology | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | OM6011SAT vs JANTXV2N7228 |
| 2N7228U | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | OM6011SAT vs 2N7228U |
| STFM340VP | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | OM6011SAT vs STFM340VP |
| IRFM450Z | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | OM6011SAT vs IRFM450Z |
| IRFM340R1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 10A, 400V, 0.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN | OM6011SAT vs IRFM340R1 |
| SHD218413B | Sensitron Semiconductors | Check for Price | Power Field-Effect Transistor, 50A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-5B, 2 PIN | OM6011SAT vs SHD218413B |
| STFM450 | Silicon Transistor Corporation | Check for Price | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | OM6011SAT vs STFM450 |
| IRFM450 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 12A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | OM6011SAT vs IRFM450 |