Part Details for NXH50C120L2C2ES1G by onsemi
Results Overview of NXH50C120L2C2ES1G by onsemi
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NXH50C120L2C2ES1G Information
NXH50C120L2C2ES1G by onsemi is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NXH50C120L2C2ES1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91AH8693
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Newark | Tmpim 1200V 50A Ci/ Tube |Onsemi NXH50C120L2C2ES1G RoHS: Not Compliant Min Qty: 6 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
NXH50C120L2C2ES1G
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Avnet Americas | Transistor IGBT Module N-Channel 1200V 50A 26-Pin DIP Tube - Rail/Tube (Alt: NXH50C120L2C2ES1G) RoHS: Compliant Min Qty: 11 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 1237 Partner Stock |
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$78.1536 / $88.2294 | Buy Now |
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DISTI #
NXH50C120L2C2ES1G
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Avnet Americas | Transistor IGBT Module N-Channel 1200V 50A 26-Pin DIP Tube - Rail/Tube (Alt: NXH50C120L2C2ES1G) RoHS: Not Compliant Min Qty: 12 Package Multiple: 6 Lead time: 111 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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Rochester Electronics | NXH50C120L2C2 - TMPIM 50 A CIB/CI Module RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 18 |
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$72.4100 / $90.5100 | Buy Now |
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DISTI #
NXH50C120C2ES1G
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ | |
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DISTI #
NXH50C120L2C2ES1G
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Avnet Silica | Transistor IGBT Module NChannel 1200V 50A 26Pin DIP Tube (Alt: NXH50C120L2C2ES1G) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NXH50C120L2C2ES1G
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EBV Elektronik | Transistor IGBT Module NChannel 1200V 50A 26Pin DIP Tube (Alt: NXH50C120L2C2ES1G) RoHS: Compliant Min Qty: 6 Package Multiple: 6 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 1237 |
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RFQ | |
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Vyrian | Transistors | 469 |
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RFQ |
Part Details for NXH50C120L2C2ES1G
NXH50C120L2C2ES1G CAD Models
NXH50C120L2C2ES1G Part Data Attributes
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NXH50C120L2C2ES1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NXH50C120L2C2ES1G
onsemi
IGBT Module, CIB 1200 V, 50 A IGBT - DBC with enhanced thermal conductivity No brake, 6-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 181AD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Date Of Intro | 2020-03-10 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PDIP-T26 | |
| Number of Elements | 6 | |
| Number of Terminals | 26 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | DUAL | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 616 ns | |
| Turn-on Time-Nom (ton) | 248 ns | |
| VCEsat-Max | 2.4 V |
NXH50C120L2C2ES1G Frequently Asked Questions (FAQ)
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A good PCB layout should ensure minimal thermal resistance, use thick copper traces, and provide adequate heat sinking. A thermal pad on the bottom of the package can be connected to a heat sink or a thermal vias array to dissipate heat efficiently.
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Choose a gate driver that can provide a high peak current (e.g., > 1A) and has a low output impedance to ensure fast switching times. The driver should also be able to handle the MOSFET's gate-source voltage (Vgs) rating of ±20V.
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The datasheet doesn't specify a specific voltage ringing limit, but as a general rule, it's recommended to keep the voltage ringing within 10-20% of the maximum rated voltage (Vds) to prevent damage or reduced lifespan.
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Yes, but be aware that the MOSFET's switching losses will increase with frequency. Ensure that the gate driver can handle the high-frequency switching, and consider using a MOSFET with a lower gate charge (Qg) for better high-frequency performance.
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Use a soft-start circuit or a controlled power-up sequence to limit inrush currents and prevent voltage spikes. During power-down, ensure that the gate voltage is fully discharged to prevent unintended turn-on.