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Part Details for NXH160T120L2Q2F2S1G by onsemi
Results Overview of NXH160T120L2Q2F2S1G by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NXH160T120L2Q2F2S1G Information
NXH160T120L2Q2F2S1G by onsemi is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NXH160T120L2Q2F2S1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
76AK6227
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Newark | Mass Pim 1200V, 160A Split Tnpc (Insourcing)/ Btray |Onsemi NXH160T120L2Q2F2S1G RoHS: Not Compliant Min Qty: 36 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$98.2000 / $105.8700 | Buy Now |
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DISTI #
488-NXH160T120L2Q2F2S1G-ND
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DigiKey | PIM POWER MODULE Min Qty: 1 Lead time: 11 Weeks Container: Tray |
33 In Stock |
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$95.8967 / $113.2500 | Buy Now |
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DISTI #
NXH160T120L2Q2F2S1G
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Avnet Americas | IGBT/Inverse Diode 2.7V 3000Vrms 56-Pin Case 180AK Tray - Trays (Alt: NXH160T120L2Q2F2S1G) RoHS: Compliant Min Qty: 36 Package Multiple: 36 Lead time: 11 Weeks, 0 Days Container: Tray | 1764 Factory Stock |
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$91.4208 / $98.3555 | Buy Now |
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DISTI #
863-NXH160T120L2Q2F2
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Mouser Electronics | IGBT Modules MASS PIM 1200V 160A SPLIT TNPC (INSOURCING) RoHS: Compliant | 22 |
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$95.8900 / $113.2400 | Buy Now |
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Onlinecomponents.com | Power Integrated Module (PIM), IGBT 1200 V, 160 A and 650 V, 100 A RoHS: Compliant | 0 |
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$95.2300 / $260.8400 | Buy Now |
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DISTI #
87653993
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Verical | Power IGBT Module Transistor RoHS: Compliant Min Qty: 36 Package Multiple: 36 | Americas - 72 |
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$96.4997 | Buy Now |
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DISTI #
NXH160T12LF2S1G
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 36 | 0 |
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$95.9000 | Buy Now |
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DISTI #
NXH160T120L2Q2F2S1G
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Avnet Silica | IGBTInverse Diode 27V 3000Vrms 56Pin Case 180AK Tray (Alt: NXH160T120L2Q2F2S1G) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 12 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Cytech Systems Limited | PIM POWER MODULE | 1200 |
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RFQ | |
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DISTI #
NXH160T120L2Q2F2S1G
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EBV Elektronik | IGBTInverse Diode 27V 3000Vrms 56Pin Case 180AK Tray (Alt: NXH160T120L2Q2F2S1G) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for NXH160T120L2Q2F2S1G
NXH160T120L2Q2F2S1G CAD Models
NXH160T120L2Q2F2S1G Part Data Attributes
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NXH160T120L2Q2F2S1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NXH160T120L2Q2F2S1G
onsemi
Power Integrated Module (PIM), IGBT 1200 V, 160 A and 650 V, 100 A, Q2, 36-BTRAY
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | Q2 | |
| Package Description | MODULE-56 | |
| Manufacturer Package Code | 180AK | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 11 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 181 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X56 | |
| Number of Elements | 4 | |
| Number of Terminals | 56 | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 500 W | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 435 ns | |
| Turn-on Time-Nom (ton) | 150 ns | |
| VCEsat-Max | 2.7 V |
NXH160T120L2Q2F2S1G Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance can be found in the onsemi application note AND9093/D, which provides guidelines for thermal design and layout considerations.
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The device requires a specific biasing scheme to operate optimally. Refer to the onsemi application note AND9094/D, which provides detailed information on biasing and configuration for the NXH160T120L2Q2F2S1G.
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Onsemi provides guidelines for soldering and assembly in their document 'Soldering and Assembly Guidelines for Power Modules' (document number: AND9101/D). Following these guidelines will help ensure reliable assembly and minimize the risk of damage during the assembly process.
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The NXH160T120L2Q2F2S1G has built-in protection features, but additional external protection circuits may be necessary depending on the application. Consult the onsemi application note AND9095/D for guidance on overvoltage and overcurrent protection.
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The thermal impedance and thermal resistance values can be found in the onsemi datasheet for the NXH160T120L2Q2F2S1G. The thermal impedance (Zth) is typically around 0.15°C/W, and the thermal resistance (Rth) is around 0.05°C/W.