Part Details for NX3008NBKMB,315 by NXP Semiconductors
Results Overview of NX3008NBKMB,315 by NXP Semiconductors
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Internet of Things (IoT)
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Aerospace and Defense
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Automotive
Robotics and Drones
NX3008NBKMB,315 Information
NX3008NBKMB,315 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NX3008NBKMB,315
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86018080
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Verical | Trans MOSFET N-CH 30V 0.53A 3-Pin DFN T/R Min Qty: 6788 Package Multiple: 1 Date Code: 1401 | Americas - 850575 |
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$0.0553 | Buy Now |
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Quest Components | 544 |
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$0.0630 / $0.2100 | Buy Now | |
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Rochester Electronics | NX3008NBKMB Small Signal Field-Effect Transistor, 0.53A, 30V, N-Channel MOSFET, XQFN3 RoHS: Compliant Status: Active Min Qty: 1 | 850575 |
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$0.0274 / $0.0442 | Buy Now |
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Vyrian | Transistors | 221414 |
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RFQ |
Part Details for NX3008NBKMB,315
NX3008NBKMB,315 CAD Models
NX3008NBKMB,315 Part Data Attributes
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NX3008NBKMB,315
NXP Semiconductors
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Datasheet
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NX3008NBKMB,315
NXP Semiconductors
NX3008NBKMB - 30 V, single N-channel Trench MOSFET DFN 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | DFN | |
| Package Description | SOT883B, DFN1006B-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT883B | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 0.53 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.7 W | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
NX3008NBKMB,315 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the layout symmetrical and avoid vias under the device. Refer to the NXP application note AN11529 for more details.
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Implement thermal management by providing a heat sink or a thermal pad on the exposed pad of the device. Ensure good airflow and avoid overheating the device above 125°C (TJ).
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The maximum allowed voltage on the VDD pin is 3.6V. Exceeding this voltage may damage the device. Use a voltage regulator or a voltage limiter to ensure safe operation.
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To configure the device for low-power mode, set the EN pin low and ensure that the VDD pin is below 2.5V. This will reduce the power consumption to approximately 10 μA.
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Use a TVS (Transient Voltage Suppressor) diode or a dedicated ESD protection IC, such as the NXP PCA9455, to protect the device from electrostatic discharge.