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Transistors / Power Field-Effect Transistors / NVMTS1D2N08H
Datasheets
NVMTS1D2N08H by: onsemi

Single N-Channel Power MOSFET 80V, 337A, 1.1mΩ, DFNW-8, 3000-REEL, Automotive Qualified

Part Details for NVMTS1D2N08H by onsemi

Results Overview of NVMTS1D2N08H by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Security and Surveillance Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Entertainment and Gaming Automotive

NVMTS1D2N08H Information

NVMTS1D2N08H by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NVMTS1D2N08H

Part # Distributor Description Stock Price Buy
DISTI # 38AH7309
Newark T8-80V In Pqfn88 For Automotive Market/ Reel Rohs Compliant: Yes |Onsemi NVMTS1D2N08H RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 500 $3.0800
$3.0800 Buy Now
DISTI # 488-NVMTS1D2N08HCT-ND
DigiKey MOSFET N-CH 80V 43.5A/337A 8DFNW Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2750
In Stock
  • 1 $7.0300
  • 10 $4.7480
  • 100 $3.5352
  • 3,000 $2.8883
$2.8883 / $7.0300 Buy Now
DISTI # NVMTS1D2N08H
Avnet Americas N-Channel Power MOSFET 80V 3374A 1.1mOhm 8-Pin DFNW Surface Mount T/R - Tape and Reel (Alt: NVMTS1D2N08H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $2.8224
  • 6,000 $2.8080
  • 12,000 $2.7936
  • 18,000 $2.7792
  • 24,000 $2.7648
$2.7648 / $2.8224 Buy Now
DISTI # 863-NVMTS1D2N08H
Mouser Electronics MOSFETs 80V 337A 1.1mOhms 0
  • 1 $6.1900
  • 10 $5.1000
  • 100 $3.9500
  • 500 $2.8900
  • 3,000 $2.8800
$2.8800 / $6.1900 Order Now
Onlinecomponents.com N-Channel Power MOSFET 80V 3374A 1.1mOhm 8-Pin DFNW Surface Mount T/R RoHS: Compliant 0
  • 750 $8.3200
  • 1,500 $4.3900
  • 2,250 $3.0200
  • 3,000 $2.9600
$2.9600 / $8.3200 Buy Now
DISTI # NVMTS1D2N08H
IBS Electronics N-CHANNEL POWER MOSFET 80V 3374A 1.1MOHM 8-PIN DFNW SURFACE MOUNT T/R Min Qty: 3000 Package Multiple: 1 0
  • 3,000 $3.6010
$3.6010 Buy Now
DISTI # NVMTS1D2N08H
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $2.8900
$2.8900 Buy Now
Chip 1 Exchange INSTOCK 1794
RFQ
DISTI # NVMTS1D2N08H
Avnet Asia N-Channel Power MOSFET 80V 3374A 1.1mOhm 8-Pin DFNW Surface Mount T/R (Alt: NVMTS1D2N08H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days 0
  • 3,000 $3.0403
  • 6,000 $3.0008
  • 9,000 $2.9623
  • 15,000 $2.9248
  • 30,000 $2.8526
  • 75,000 $2.7839
  • 150,000 $2.7184
$2.7184 / $3.0403 Buy Now
DISTI # NVMTS1D2N08H
Avnet Silica NChannel Power MOSFET 80V 3374A 11mOhm 8Pin DFNW Surface Mount TR (Alt: NVMTS1D2N08H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NVMTS1D2N08H
EBV Elektronik NChannel Power MOSFET 80V 3374A 11mOhm 8Pin DFNW Surface Mount TR (Alt: NVMTS1D2N08H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 887
RFQ
Wuhan P&S   Min Qty: 1 1380
  • 1 $8.0600
  • 100 $5.1500
  • 500 $4.2400
  • 1,000 $3.9000
$3.9000 / $8.0600 Buy Now

Part Details for NVMTS1D2N08H

NVMTS1D2N08H CAD Models

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NVMTS1D2N08H Part Data Attributes

Parametric Data
NVMTS1D2N08H onsemi
Buy Now Datasheet
Compare Parts:
NVMTS1D2N08H onsemi Single N-Channel Power MOSFET 80V, 337A, 1.1mΩ, DFNW-8, 3000-REEL, Automotive Qualified
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DFNW-8
Package Description DFNW-8
Manufacturer Package Code 507AP
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 3170 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 337 A
Drain-source On Resistance-Max 0.0011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 43 pF
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 900 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

NVMTS1D2N08H Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the NVMTS1D2N08H is -40°C to 150°C.

  • To ensure reliability, follow the recommended assembly and soldering guidelines, and ensure that the device is operated within the specified voltage and current ratings. Additionally, consider using a thermal management strategy to keep the device within its recommended operating temperature range.

  • The recommended PCB layout for the NVMTS1D2N08H involves using a thermal pad and thermal vias to dissipate heat. A heat sink or thermal interface material can also be used to improve thermal performance. Consult the onsemi application note for more detailed guidance.

  • When handling the NVMTS1D2N08H, ensure that you follow proper electrostatic discharge (ESD) precautions and use a high-voltage probe or test fixture to prevent damage to the device. Use a variable power supply to gradually increase the voltage and current to the recommended ratings.

  • To ensure EMC, follow proper PCB layout and shielding guidelines, and consider using a common-mode choke or ferrite bead to filter out electromagnetic interference (EMI). Additionally, ensure that the device is operated within its specified frequency range.

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