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Part Details for NVMFWS1D3N04XMT1G by onsemi
Results Overview of NVMFWS1D3N04XMT1G by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NVMFWS1D3N04XMT1G Information
NVMFWS1D3N04XMT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFWS1D3N04XMT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
488-NVMFWS1D3N04XMT1G-ND
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DigiKey | SINGLE N-CHANNEL POWER MOSFET 40 Lead time: 17 Weeks Container: Bulk | Limited Supply - Call |
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Buy Now | |
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DISTI #
NVMFWS1D3N04XMT1G
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Avnet Americas | MOSFET - Power, Single N-Channel - Tape and Reel (Alt: NVMFWS1D3N04XMT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.6281 / $0.6686 | Buy Now |
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DISTI #
863-VMFWS1D3N04XMT1G
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Mouser Electronics | MOSFETs 40V T10M IN S08FL PACKAGE RoHS: Compliant | 0 |
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$0.6570 / $1.8100 | Order Now |
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Chip 1 Exchange | INSTOCK | 1690 |
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RFQ | |
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DISTI #
NVMFWS1D3N04XMT1G
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Avnet Silica | MOSFET Power Single NChannel (Alt: NVMFWS1D3N04XMT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 21 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NVMFWS1D3N04XMT1G
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EBV Elektronik | MOSFET Power Single NChannel (Alt: NVMFWS1D3N04XMT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 22 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for NVMFWS1D3N04XMT1G
NVMFWS1D3N04XMT1G CAD Models
NVMFWS1D3N04XMT1G Part Data Attributes
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NVMFWS1D3N04XMT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NVMFWS1D3N04XMT1G
onsemi
Single N-Channel Power MOSFET 40 V, 195A, 1.3 mΩ, DFNW5 4.90x5.90x1.00, 1.27P, 1500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFNW5 4.90x5.90x1.00, 1.27P | |
| Manufacturer Package Code | 507BA | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | onsemi | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
NVMFWS1D3N04XMT1G Frequently Asked Questions (FAQ)
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The recommended PCB layout for optimal thermal performance can be found in the onsemi application note AND9093/D, which provides guidelines for thermal design and layout considerations.
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To ensure reliable operation in high-temperature environments, follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using thermal management techniques such as heat sinks or thermal interfaces to reduce the device junction temperature.
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The maximum allowed voltage stress on the NVMFWS1D3N04XMT1G is specified in the datasheet as 20V. Exceeding this voltage may cause permanent damage to the device.
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To prevent electrostatic discharge (ESD) damage, follow proper ESD handling and assembly procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. The device is designed to withstand ESD events up to 2kV according to the Human Body Model (HBM).
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The recommended soldering profile for the NVMFWS1D3N04XMT1G can be found in the onsemi application note AND9101/D, which provides guidelines for soldering and assembly.