Part Details for NVMFS6B14NLWFT1G by onsemi
Results Overview of NVMFS6B14NLWFT1G by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NVMFS6B14NLWFT1G Information
NVMFS6B14NLWFT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFS6B14NLWFT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
81Y4042
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Newark | T5 100V Ll S08Fl/Reel |Onsemi NVMFS6B14NLWFT1G RoHS: Not Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
NVMFS6B14NLWFT1G
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Avnet Silica | T5 100V LL S08FL (Alt: NVMFS6B14NLWFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NVMFS6B14NLWFT1G
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EBV Elektronik | T5 100V LL S08FL (Alt: NVMFS6B14NLWFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for NVMFS6B14NLWFT1G
NVMFS6B14NLWFT1G CAD Models
NVMFS6B14NLWFT1G Part Data Attributes
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NVMFS6B14NLWFT1G
onsemi
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Datasheet
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NVMFS6B14NLWFT1G
onsemi
Single N-Channel Power MOSFET 100V, 55A, 13mΩ, 1500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 488AA | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 29 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain-source On Resistance-Max | 0.019 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
NVMFS6B14NLWFT1G Frequently Asked Questions (FAQ)
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The recommended operating voltage range for NVMFS6B14NLWFT1G is 2.7V to 3.6V.
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To ensure data integrity, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
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The NVMFS6B14NLWFT1G supports up to 100,000 erase cycles.
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Page erase and program operations should be performed using the recommended algorithms and timing specifications outlined in the datasheet to ensure reliable operation.
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The recommended storage temperature range for NVMFS6B14NLWFT1G is -40°C to 125°C.