Part Details for NVMFS6B05NLT1G by onsemi
Results Overview of NVMFS6B05NLT1G by onsemi
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NVMFS6B05NLT1G Information
NVMFS6B05NLT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for NVMFS6B05NLT1G
NVMFS6B05NLT1G CAD Models
NVMFS6B05NLT1G Part Data Attributes
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NVMFS6B05NLT1G
onsemi
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Datasheet
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NVMFS6B05NLT1G
onsemi
Single N-Channel Power MOSFET 100V, 114A, 5.6mΩ, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SO-8FL / DFN-5 | |
| Package Description | SO-8FL, DFN5, 6 PIN | |
| Manufacturer Package Code | 488AA | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 114 A | |
| Drain-source On Resistance-Max | 0.0082 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 165 W | |
| Pulsed Drain Current-Max (IDM) | 330 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
NVMFS6B05NLT1G Frequently Asked Questions (FAQ)
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The recommended PCB layout and thermal management for optimal performance can be found in the onsemi application note AND9005/D, which provides guidelines for thermal design and layout considerations. Additionally, it's recommended to follow the JEDEC standard for thermal interface material and thermal pad design.
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To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using thermal interface materials with high thermal conductivity, and ensure good airflow around the device. It's also recommended to perform thermal simulations and testing to validate the design.
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The NVMFS6B05NLT1G has built-in ESD protection, but it's still essential to follow proper handling and storage precautions to prevent damage. Use an anti-static wrist strap, mat, or workstation, and avoid touching the device's pins or exposed die. Store the devices in anti-static packaging, and follow the recommended soldering and assembly procedures.
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Yes, the NVMFS6B05NLT1G is suitable for high-reliability and automotive applications. It's AEC-Q101 qualified and meets the requirements for automotive-grade devices. However, it's essential to follow the recommended design and testing guidelines, and to consult with onsemi's application engineers for specific requirements and validation.
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To troubleshoot and debug issues with the NVMFS6B05NLT1G, start by consulting the datasheet and application notes. Use oscilloscopes and logic analyzers to monitor the device's signals and behavior. Check for proper power supply, clock, and signal integrity. If issues persist, contact onsemi's technical support for further assistance and guidance.