Part Details for NVMFS5C628NLT1G by onsemi
Results Overview of NVMFS5C628NLT1G by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NVMFS5C628NLT1G Information
NVMFS5C628NLT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFS5C628NLT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
07AH4430
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Newark | Mosfet, Aec-Q101, N-Ch, 60V, 150A, Dfn, Transistor Polarity:N Channel, Continuous Drain Current Id:150A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.002Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Rohs Compliant: Yes |Onsemi NVMFS5C628NLT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1380 |
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$2.8400 | Buy Now |
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DISTI #
87AK0375
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Newark | Trench 6 60V Nfet/ Reel Rohs Compliant: Yes |Onsemi NVMFS5C628NLT1G RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.6400 | Buy Now |
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DISTI #
488-NVMFS5C628NLT1GCT-ND
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DigiKey | MOSFET N-CH 60V 5DFN Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1252 In Stock |
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$1.1898 / $2.9000 | Buy Now |
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DISTI #
NVMFS5C628NLT1G
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Avnet Americas | Trans MOSFET N-CH 60V 150A 5-Pin DFN EP T/R - Tape and Reel (Alt: NVMFS5C628NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 21 Weeks, 0 Days Container: Reel | 0 |
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$1.1328 / $1.1607 | Buy Now |
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DISTI #
863-NVMFS5C628NLT1G
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Mouser Electronics | MOSFETs TRENCH 6 60V NFET RoHS: Compliant | 24969 |
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$1.2300 / $2.9000 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$1.1800 / $2.4700 | Buy Now |
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DISTI #
NVMFS5C628NLT1G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 | 0 |
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$1.1900 | Buy Now |
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DISTI #
NVMFS5C628NLT1G
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Avnet Silica | Trans MOSFET NCH 60V 150A 5Pin DFN EP TR (Alt: NVMFS5C628NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 22 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NVMFS5C628NLT1G
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EBV Elektronik | Trans MOSFET NCH 60V 150A 5Pin DFN EP TR (Alt: NVMFS5C628NLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 6334 |
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RFQ |
Part Details for NVMFS5C628NLT1G
NVMFS5C628NLT1G CAD Models
NVMFS5C628NLT1G Part Data Attributes
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NVMFS5C628NLT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NVMFS5C628NLT1G
onsemi
Single N-Channel Power MOSFET 60V, 150A, 2.4mΩ, SO-8FL / DFN-5, 1500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SO-8FL / DFN-5 | |
| Package Description | SO-8FL, DFN5, 4 PIN | |
| Manufacturer Package Code | 488AA | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 565 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 150 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 28 pF | |
| JESD-30 Code | R-PSSO-F4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 900 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
NVMFS5C628NLT1G Frequently Asked Questions (FAQ)
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The recommended operating voltage range for NVMFS5C628NLT1G is 2.7V to 3.6V.
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To ensure data integrity, it is recommended to follow the power-down and power-up sequences outlined in the datasheet, and to use a voltage supervisor or reset circuit to ensure that the device is properly initialized.
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The NVMFS5C628NLT1G supports up to 100,000 erase cycles per sector.
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Page and block locking can be handled using the device's built-in locking mechanisms, which allow specific pages or blocks to be locked to prevent accidental erasure or modification.
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The typical programming time for NVMFS5C628NLT1G is around 2-3 milliseconds per page.