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Part Details for NVMFS5C612NLWFAFT1G by onsemi
Results Overview of NVMFS5C612NLWFAFT1G by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NVMFS5C612NLWFAFT1G Information
NVMFS5C612NLWFAFT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NVMFS5C612NLWFAFT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54AH9535
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Newark | Mosfet, N-Ch, 60V, 250A, 175Deg C, 167W Rohs Compliant: Yes |Onsemi NVMFS5C612NLWFAFT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$2.1300 / $4.5500 | Buy Now |
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DISTI #
488-NVMFS5C612NLWFAFT1GCT-ND
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DigiKey | MOSFET N-CH 60V 38A/250A 5DFN Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1752 In Stock |
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$1.9367 / $4.4800 | Buy Now |
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DISTI #
NVMFS5C612NLWFAFT1G
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Avnet Americas | Trans MOSFET N-CH 60V 250A 5-Pin DFN T/R - Tape and Reel (Alt: NVMFS5C612NLWFAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$1.8432 / $2.0452 | Buy Now |
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DISTI #
863-NVMFS5C612NWFT1G
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Mouser Electronics | MOSFETs NFET SO8FL 60V | 760 |
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$1.9300 / $4.3900 | Buy Now |
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Onlinecomponents.com | Single N-Channel Power MOSFET 60V, 235A, 1.5mΩ 1500 / Tape & Reel (Pb?Free, Wettable Flanks) RoHS: Compliant | 0 |
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$1.9200 / $4.0300 | Buy Now |
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DISTI #
NVMFS5C612NLW1G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 | 0 |
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$1.9400 | Buy Now |
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DISTI #
SMC-NVMFS5C612NLWFAFT1G
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Sensible Micro Corporation | OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 35 |
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RFQ | |
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DISTI #
NVMFS5C612NLWFAFT1G
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Avnet Silica | Trans MOSFET NCH 60V 250A 5Pin DFN TR (Alt: NVMFS5C612NLWFAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 16 Weeks, 0 Days | Silica - 3000 |
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Buy Now | |
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Chip Stock | 12000 |
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RFQ | ||
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DISTI #
NVMFS5C612NLWFAFT1G
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EBV Elektronik | Trans MOSFET NCH 60V 250A 5Pin DFN TR (Alt: NVMFS5C612NLWFAFT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for NVMFS5C612NLWFAFT1G
NVMFS5C612NLWFAFT1G CAD Models
NVMFS5C612NLWFAFT1G Part Data Attributes
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NVMFS5C612NLWFAFT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NVMFS5C612NLWFAFT1G
onsemi
Single N-Channel Power MOSFET 60V, 235A, 1.5mΩ 1500 / Tape & Reel (Pb?Free, Wettable Flanks), DFNW5 4.90x5.90x1.00, 1.27P, 1500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFNW5 4.90x5.90x1.00, 1.27P | |
| Manufacturer Package Code | 507BE | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Date Of Intro | 2017-02-24 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 451 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 250 A | |
| Drain-source On Resistance-Max | 0.0023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 45 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Pulsed Drain Current-Max (IDM) | 900 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
NVMFS5C612NLWFAFT1G Frequently Asked Questions (FAQ)
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The recommended operating temperature range for NVMFS5C612NLWFAFT1G is -40°C to 125°C.
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To ensure data integrity and prevent data corruption during power cycling, it is recommended to use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory.
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The NVMFS5C612NLWFAFT1G supports up to 100,000 erase cycles.
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No, NVMFS5C612NLWFAFT1G is not designed for use in radiation-intensive environments. If you need a radiation-hardened device, you should consider a different part number.
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In case of page erase or programming errors, it is recommended to retry the operation up to 3 times. If the error persists, the device may need to be replaced.